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  8030B Datasheet PDF File

For 8030B Found Datasheets File :: 16+       Page :: | <1> | 2 |   

    Samsung Semiconductor Co., Ltd.
Part No. KM48S8030B
Description 2M x 8Bit x 4 Banks Synchronous DRAM(2M x 8x 4组同步动态RAM) 200万8位4银行同步DRAM米8位4组同步动态RAM)的

File Size 629.20K  /  43 Page

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HUA FENG CIRCUIT





    APT8030B2VR

ADPOW[Advanced Power Technology]
Part No. APT8030B2VR
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.13K  /  4 Page

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    APT8030 APT8030B2VFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030 APT8030B2VFR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm

File Size 60.47K  /  4 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH KM416S8030BN-G/FH
Description 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

File Size 76.60K  /  9 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM416S8030BN-G/FH KM416S8030BN-G/FL
Description 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128MbSDRAM的收缩的TSOP 200万16 × 4银行同步DRAM LVTTL

File Size 55.29K  /  9 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF18030BLR3
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 344.88K  /  8 Page

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    KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F1

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F10 KM416S8030BT-G/F8 KM416S8030BT-G/FA KM416S8030BT-G/FH KM416S8030BT-G/FL
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 132.04K  /  11 Page

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    Toshiba Corporation
Part No. THMY728030BEG-80
Description 8M Word x 72 Bit Synchronous DRAM Module(8M字x 72位同步DRAM模块)

File Size 819.56K  /  13 Page

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    MRF18030BLR3 MRF18030BLSR3

Freescale Semiconductor, Inc
Part No. MRF18030BLR3 MRF18030BLSR3
Description RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

File Size 341.89K  /  8 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
Part No. APT8030B2VFR_05 APT8030B2VFR APT8030B2VFR05 APT8030B2VFRG
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

File Size 58.22K  /  4 Page

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