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Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
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| Part No. |
PNZ331CL
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| OCR Text |
..., RL = 50 VR = 10V VR = 10V, = 800nm Measured from the optical axis to the half power point Effective detection area 7 Conditions min typ 0.1 14 900 2 3 0.55 70 0.88 max 10 Unit nA A nm ns pF A/W deg. mm
Note 1) Spectral sensitivity: Se... |
| Description |
PIN Photodiode FIBER OPTIC PHOTODIODE DETECTOR, THROUGH HOLE MOUNT, TO-18
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| File Size |
52.42K /
3 Page |
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PERKINELMER[PerkinElmer Optoelectronics]
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| Part No. |
C30737P-500 C30737 C30737E-230 C30737E-500 C30737P-230
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| OCR Text |
...ameter Breakdown Voltage Gain @ 800nm Responsivity @ 800nm Temperature Coefficient (constant gain) Dark Current
Noise Current: f=10kHz, F=1.0KhZ
Typ 0.23 160 100 50 0.6 10 0.2 1.5 <0.3
Max 200
Min
Typ 0.5 160 100 50 0.6 15 0.3 ... |
| Description |
From old datasheet system
Epitaxial Silicon Avalanche Photodiode
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| File Size |
94.45K /
5 Page |
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Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
PNZ331F
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| OCR Text |
..., RL = 50 VR = 10V VR = 10V, = 800nm Measured from the optical axis to the half power point Effective photodetection area 0.45 4 Conditions min typ 0.1 7 900 50 3 0.55 40 0.88 max 10 Unit nA A nm MHz pF A/W deg. mm
Note 1) Spectral sens... |
| Description |
PIN Photodiode
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| File Size |
55.25K /
3 Page |
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it Online |
Download Datasheet |
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Matsshita / Panasonic
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| Part No. |
PN331CL PNZ331CL PNZ331CLPN331CL
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| OCR Text |
..., RL = 50 VR = 10V VR = 10V, = 800nm Measured from the optical axis to the half power point Effective detection area 7 Conditions min typ 0.1 14 900 2 3 0.55 70 0.88 max 10 Unit nA A nm ns pF A/W deg. mm
Note 1) Spectral sensitivity: Se... |
| Description |
PNZ331CL (PN331CL) - PIN Photodiode
PIN Photodiodes
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| File Size |
57.50K /
4 Page |
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it Online |
Download Datasheet |
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HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
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| Part No. |
R316 R316-02
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| OCR Text |
...ter Luminous (2856K) Radiant at 800nm (peak) R316 Red/White Ratio R316-02 (IR-D80A filter) Quantum Efficiency R316 R316-02 at 1.06m Luminous (2856K) Radiant at 800nm (peak) Min. 10 -- -- -- -- 0.04 5 -- -- -- -- -- -- Typ. 20 1.9 0.1 0.14 0... |
| Description |
PHOTOMULTIPLIER TUBES
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| File Size |
23.15K /
2 Page |
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it Online |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
R2949
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| OCR Text |
...Dark Counts
TPMSB0159EA
160 800nm 140 600nm
10000
120
1000 400nm
ANODE SENSITIVITY (%)
100
80
DARK COUNTS (cps)
100
60
40
10
20
0
-40
-20
0
+20
+40
0 -40
-20
0
+20
+40... |
| Description |
PHOTOMULTIPLIER TUBE
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| File Size |
51.03K /
4 Page |
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PANASONIC CORP
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| Part No. |
PNA3202
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| OCR Text |
...sensitivity s v r = 10v, l = 800nm 0.50 0.55 0.60 a/w *1 white tungsten lamp light source (color temperature t = 2856k) *2 semiconductor laser light source ( l = 800nm ) features fast response : t r , t f = 30 ns (typ.) good photo... |
| Description |
PIN PHOTO DIODE
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| File Size |
42.42K /
2 Page |
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it Online |
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Price and Availability
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