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International Rectifier, Corp. Integrated Device Technology, Inc. IRF[International Rectifier]
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Part No. |
IRHYK57133CMSE IRHYK57133CMSEPBF
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OCR Text |
...A, VGS = 12V A ISD 20A, di/dt 690a/s, VDD 130V, TJ 150C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irrad... |
Description |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
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File Size |
187.12K /
8 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRGBC40S
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OCR Text |
690a
IRGBC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Switching-loss rating includes all "tail" losses * Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve
G E C
Standard Speed IGBT... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=31A)
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File Size |
212.62K /
6 Page |
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it Online |
Download Datasheet |
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690a Found Datasheets File :: 8 Search Time::2.078ms Page :: | <1> | |
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