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POLYFET[Polyfet RF Devices]
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| Part No. |
F1535
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| OCR Text |
...match Toleranc MIN 13 55 TYP
35watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.6 A, Vds = 28.0 V, F = 500 MHz Idq = 1.6 A, Vds = 28.0 V, F = 500 MHz Idq = 1.6 A, Vds = 28.0 V, F = 500 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
35.43K /
2 Page |
 View
it Online |
Download Datasheet
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FutureWafer Tech Co.,Lt...
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| Part No. |
FESD12U FESD12U-50PF
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| OCR Text |
35watts peak pulse power per line(tp=8/20us) ultra low capacitance:50pf max.(i/o to gnd.) protection one line i/o port dfn1006 - 2l iec compatibility en61000 - 4 61000 - 4 - 2(esd):level 4,air:18kv,contact:24kv ... |
| Description |
Small Package ESD Protection
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| File Size |
544.17K /
5 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1401
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| OCR Text |
...match Toleranc MIN 10 75 TYP
35watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
41.79K /
2 Page |
View
it Online |
Download Datasheet |
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