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3400a Datasheet PDF File

For 3400a Found Datasheets File :: 23 Search Time::1.25ms
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					Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FD1500BV-90DA
OCR Text	...ns VRM = 4500V, Tj = 125C IFM = 3400a, Tj = 125C IFM = 1500A, di/dt = 1000A/s, VR = 2250V, Tj = 125C With clamp circuit (Refer to Fig. 1 and Fig. 2) Junction to fin Limits Min. -- -- -- -- -- -- Typ. -- -- -- 8.0 2 -- Max. 150 3.5 3600 -- -...
Description	HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
File Size	26.95K / 3 Page	View it Online	Download Datasheet

					Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
Part No.	FD1500AU-120DA
OCR Text	...esistance Test conditions IFM = 3400a, Tj = 125C VRM = 6000V, Tj = 125C IFM = 1500A, di/dt = 1000A/s, VR = 3000V, Tj = 125C CC = 6F, LC = 0.3H (See Fig. 1, 2) Junction to Fin Min. -- -- -- -- -- Limits Typ. -- -- -- -- -- Max. 5 150 5400 9....
Description	HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
File Size	27.74K / 2 Page	View it Online	Download Datasheet

					Green Power Solutions srl
Part No.	GOG94034 GOG96034
OCR Text	...GE UP TO 690V DC OUTPUT CURRENT 3400a GOG94034 GOG95034 GOG96034 Line to line voltage 400 500 690 Characteristic IDC VINS (rms) DC output current Insulation voltage Conditions Value 3400 A 3000 V Value 3400 A 300...
Description	THREE PHASE AC-DC BRIDGE
File Size	696.21K / 3 Page	View it Online	Download Datasheet

					Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
Part No.	FD1500CV-90DA
OCR Text	...esistance Test conditions IFM = 3400a, Tj = 125C VRM = 4500V, Tj = 125C IFM = 1500A, di/dt = 1000A/s, VR = 2250V, Tj = 125C CC = 6F, LC = 0.3H (See Fig. 1, 2) Junction to Fin Min. -- -- -- -- -- Limits Typ. -- -- -- -- -- Max. 5 150 4000 7 ...
Description	HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
File Size	27.64K / 2 Page	View it Online	Download Datasheet

					DYNEX[Dynex Semiconductor] Dynex Semiconductor, Ltd.
Part No.	DS2004SF24 DS2004SF28 DS2004SF DS2004SF25 DS2004SF27 DS2004SF26
OCR Text	... Slope resistance Conditions At 3400a peak, Tcase = 25oC At VRRM, Tcase = 175oC IF = 2000A, dIRR/dt = 3A/s, Tcase = 175C, VR = 100V At Tvj = 175C At Tvj = 175C Min. Max. 1.3 50 2500 105 0.82 0.16 Units V mA C A V m CURVES 5000 Measured ...
Description	Rectifier Diode 2372 A, 2800 V, SILICON, RECTIFIER DIODE Rectifier Diode 2372 A, 2700 V, SILICON, RECTIFIER DIODE
File Size	91.34K / 7 Page	View it Online	Download Datasheet

					Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48
OCR Text	... Slope resistance Conditions At 3400a peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/s, Tcase = 150C, VR = 100V At Tvj = 150C At Tvj = 150C Min. Max. 1.8 75 4000 115 0.84 0.383 Units V mA C A V m CURVES 5000 4000 ...
Description	Rectifier Diode 1428 A, 4400 V, SILICON, RECTIFIER DIODE Rectifier Diode 1428 A, 4600 V, SILICON, RECTIFIER DIODE Rectifier Diode 1428 A, 4300 V, SILICON, RECTIFIER DIODE
File Size	89.64K / 7 Page	View it Online	Download Datasheet

					Micro Commercial Compon... MCC[Micro Commercial Components]
Part No.	MBR30045 MBR30040 MBR30020 MBR30030 MBR30035
OCR Text	...n Capacitance IF(AV) IFSM 300 A 3400a TC = 133C 8.3ms, half sine DIM A B C D E F G H J K L INCH ES MIN MAX 1.515 .725 .595 1.182 .745 .152 1/4 - 20 .540 .15 .495 .120 1.560 .775 .625 1.192 .755 .160 .580 .160 .505 .130 DIMENSIONS MM MIN 38...
Description	300 Amp Rectifier 20 to 45V olts Schottky Barrier
File Size	136.89K / 3 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPI120P04P4-04 IPB120P04P4-04
OCR Text	... 30 -v ds [v] c [ p f ] -340a -3400a 1.2 1.7 2.2 2.7 3.2 3.7 -60 -20 20 60 100 140 180 t j [c] - v g s ( t h ) [ v ] 35 36 37 38 39 40 41 42 43 44 45 -60 -20 20 60 100 140 180 t j [c] - v b r ( d s s ) [ v ] rev. 1.0 page 6 2011-02-14 ...
Description	OptiMOS-P2 Power-Transistor
File Size	206.64K / 9 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FD1500AV-90
OCR Text	..., VRRM Applied Tj = 125C, IFM = 3400a, Instantaneous measurement IFM = 1200A, diF/dt = -30A/s, VR = 150V, Tj = 125C Junction to fin Min -- -- -- -- Limits Typ -- -- -- -- Max 150 3.0 2000 0.013 Unit mA V C C/W Aug.1998 0.4 MIN TYPE NA...
Description	MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
File Size	50.39K / 3 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPI120P04P4L-03 IPB120P04P4L-03 IPP120P04P4L-03
OCR Text	... 30 -v ds [v] c [ p f ] -340a -3400a 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] - v g s ( t h ) [ v ] 35 36 37 38 39 40 41 42 43 44 45 -60 -20 20 60 100 140 180 t j [c] - v b r ( d s s ) [ v ] rev. 1.0 page 6 2011-02-10 ipb120p0...
Description	OptiMOS-P2 Power-Transistor
File Size	208.41K / 9 Page	View it Online	Download Datasheet

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