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  32.006 Datasheet PDF File

For 32.006 Found Datasheets File :: 6160    Search Time::1.203ms    
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    2SA1052

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1052
OCR Text ...hFE B MB 100 to 200 C MC 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 -- -- D MD VCE(sat) VBE V V I C = -10 mA, IB = -1 mA VCE = -12...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description Silicon PNP Epitaxial 硅外延进步党

File Size 23.30K  /  5 Page

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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...5 -4 -- -- 60 10 -- D SD 160 to 320 Typ -- -- -- -- -0.2 -- -- -0.64 Max -- -- -- -0.5 -0.6 320 -- -- V Unit V V V A V Test conditions I C =...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

File Size 23.33K  /  5 Page

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2SA1122
OCR Text ...ote: Grade Mark hFE B CC 160 to 320 C CD 250 to 500 V(BR)EBO I CBO I EBO hFE* 160 -- -- D CE VCE(sat) VBE V V I C = -10 mA, IB =...06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 23.23K  /  5 Page

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ...100 -140 -270 40 180 35 110 10 -320 mV mV pF MHz ns ns ns 560 Min Typ Max - 0.1 Unit A V V V Note) *1: Rank classification *2: Reference to the measurement circuit. 0 to 0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Pac...
Description    Silicon PNP epitaxial planer type

File Size 48.79K  /  2 Page

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    2SB779

PANASONIC[Panasonic Semiconductor]
Part No. 2SB779
OCR Text ...ransition frequency fT (MHz) 320 280 240 200 160 120 80 40 50 400 40 300 Ta=75C 25C 30 200 -25C 20 100 10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 ...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

File Size 35.18K  /  2 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... 20V nA --- -200 VGS = -20V 210 320 ID = 85A 45 68 nC VDS = 60V 73 110 VGS = 10V 22 --- VDD = 38V 130 --- ID = 85A ns 84 --- RG = 1.8 86 ---...06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Puls...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...) Pulsed Drain Current Max. 320 230 160 1360 330 2.2 20 630 1050 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1...06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Puls...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...2 or M3 screw Max. 80 56 75 320 200 1.3 20 280 946 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/C V mJ A mJ C 300 (1.6mm...06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Puls...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... SEE FIGURE 13 160 200 240 280 320 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Dr...06 (.160 ) 3 .55 (.140 ) 1.40 (.05 5) 3X 1.15 (.04 5) 2.5 4 (.10 0) 0.93 (.03 7) 3X 0.69 (.02 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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