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IR3502A SHM80SMS TQS5200 A1112 F2134 PL10103 44749 3983SLPT
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  3.5a Datasheet PDF File

For 3.5a Found Datasheets File :: 4100    Search Time::1.266ms    
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    1206L012 1206L200 1206L110TH-1 1206L075-16 1206L075TH-1 1206L075-132 1206L050-15 1206L150THWR 1206L020 1206L025 1206L016

Littelfuse
Part No. 1206L012 1206L200 1206L110TH-1 1206L075-16 1206L075TH-1 1206L075-132 1206L050-15 1206L150THWR 1206L020 1206L025 1206L016
OCR Text ...conds 0.04a 0.10a 0.20a 0.25a 0.35a 0.50a 0.10 1 10 100 1000 0.1 11 0 100 cur r ent in amper es time in seconds 0.13a 0.10a 0.20a 0.35a 0.50a 0.75a 1.00a 0.12a 0.16a 0.20a 0.25a 0.35a 0.35a/15v 0.50a 0.50a/15v 0.75a 1.0a 1.1a 1.5a 2.0a 0.1...
Description RoHS compliant, lead-free and halogen-free

File Size 689.67K  /  6 Page

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    IRFP4332PBF

International Rectifier
Part No. IRFP4332PBF
OCR Text ...25C, ID = 1mA m VGS = 10V, ID = 35A e V mV/C A mA nA VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 35A VDD = 125V, ID = 35A, VGS = 10Ve VDD = 200V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.3F, VGS = 15V...
Description PDP SWITCH

File Size 304.33K  /  8 Page

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    FS70SMJ-2

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS70SMJ-2
OCR Text ...S = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 13 14 0.46 68 8...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 45.45K  /  4 Page

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    AR35A01 AR35A06 AR35A10 AR35A02 AR35A04 AR35A005 AR35A08

Yangzhou yangjie electronic co., ltd
Yangzhou yangjie electronic...
Part No. AR35A01 AR35A06 AR35A10 AR35A02 AR35A04 AR35A005 AR35A08
OCR Text ... i o 35a v rrm 50v~1000v ?? plastic material used carries underwriters ? high surge forward current capability ? applications ?? general purpose 1 phase rectifier applications ?...
Description Silicon Rectifier

File Size 139.12K  /  2 Page

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    B70NFS03L B70NH03L STB70NFS03L_06 STB70NFS03L

STMICROELECTRONICS[STMicroelectronics]
Part No. B70NFS03L B70NH03L STB70NFS03L_06 STB70NFS03L
OCR Text ...e on resistance VGS = 10V, ID = 35A VGS = 5V, ID = 18A Table 5. Symbol IR VF Shottcky static Parameter Reverse leakage current Test conditions Tj = 25C VR = 30V Tj = 100C VR = 30V Min. Typ. Max. 0.2 100 0.51 0.46 Unit mA mA V V 0...
Description N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion

File Size 270.92K  /  13 Page

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    IRLBD59N04E 2297

International Rectifier
Part No. IRLBD59N04E 2297
OCR Text ... ID = 1mA 0.018 VGS = 10V, ID = 35A 0.021 VGS = 5.0V, ID = 30A 2.0 V VDS = V GS, ID = 250A 20 V IGSS = 20A --- S VDS = 25V, ID = 35A 25 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 1.0 VGS = 5.0V A -1.0 VGS = -5.0V 50 ID = 35A ...
Description HEXFET? Power MOSFET
From old datasheet system

File Size 116.08K  /  8 Page

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    IRFB4332PBF

International Rectifier
Part No. IRFB4332PBF
OCR Text ...25C, ID = 1mA m VGS = 10V, ID = 35A e V mV/C A mA nA VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 35A VDD = 125V, ID = 35A, VGS = 10Ve VDD = 200V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.3F, VGS = 15V...
Description    PDP SWITCH

File Size 307.64K  /  8 Page

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    HUF75321S3S FN4360 HUF75321P3

Intersil Corporation
Part No. HUF75321S3S FN4360 HUF75321P3
OCR Text 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per silicon area, res...
Description 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)
From old datasheet system
35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs

File Size 129.92K  /  9 Page

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    FDB8441

Fairchild Semiconductor
Part No. FDB8441
OCR Text ...0V VGS = 0 to 2V VDD = 20V ID = 35A Ig = 1mA 15000 1250 685 1.1 215 29 60 32 49 280 38 pF pF pF nC nC nC nC nC FDB8441 Rev.A 2 www.fairchildsemi.com FDB8441 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C...
Description N-Channel PowerTrench MOSFET

File Size 262.74K  /  7 Page

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