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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF2045
OCR Text	....8 to 2.2 GHz frequency range. 3 BLF2045 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange pac...
Description	UHF power LDMOS transistor
File Size	131.69K / 11 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries]
Part No.	DC16-73
OCR Text	... Typ. .25 Max. 1.66 .35 1.3:1 1.3:1 16.6 1.3:1 Unit GHz dB dB Min. 1.71 Typ. .35 Max. 1.99 .45 1.3:1 1.3:1 15.8 1.3:1 Unit GHz dB dB 23 24 1.1:1 1.1:1 22 23 1.1:1 1.1:1 14.6 15.6 1.1:1 dB 13.8 ...
Description	Directional Coupler
File Size	59.62K / 3 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC318MS8G
OCR Text	...15 10 5 0V 1.0V 8 1.4V 1.8V 3.0V RESPONSE (dB) 0 -5 -10 -15 -20 4.5 GAIN (dB) S11 S21 S22 0 -5 -10 -15 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 5 5.5 FREQUENCY (GHz) 6 6.5 Gain vs. Temperature, Vctl = 0V...
Description	GaAs MMIC LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz
File Size	210.10K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC5216 C5216A
OCR Text	...t VSWR Vd Vg Chip Size (16) 2.4 3.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 V V mm2 16 2.2 2.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 Typical V V mm2 Max. 43 20 Unit GHz dB dBm Min. 37 20 Typical Max. 40 Unit GHz dB dBm PHOTOGRAPH Min. 40 ( ):Des...
Description	Q-Band 4-Stage Driver Amplifier From old datasheet system
File Size	29.81K / 4 Page	View it Online	Download Datasheet

				Avago Technologies, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-9970
OCR Text	...al) C block IN 1 2 Vd = 7.8 V 4 3 MSA C block OUT 6-489 5965-9668E MSA-9970 Absolute Maximum Ratings Parameter Device Current ...GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 14.5 8.0 Typ. 17.5 16....
Description	Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大
File Size	44.98K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE68100 NE68119-T1 NE681 NE68130-T1 NE68133-T1B NE68135
OCR Text	...n. 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY VCE = 3 V, IC = 5 mA 30 (SO...GHz) NE681 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACK...
Description	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	215.81K / 20 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M
OCR Text	...re VCES VEBO IC PTOT TSTG Tj 65 3.0 4.0 120 -65 to +200 200 Units V V A W C C ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min ...GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=...
Description	RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY
File Size	97.49K / 2 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
Part No.	NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text	3.1 GHz, 200s Pulse, 10% Duty Features * * * * * * Input and Output matched to 50 RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate r = 10.5 Hermetic Package Nickel plated copper flange Outline Drawing1...
Description	Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
File Size	52.66K / 2 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	RF2045 RF2045PCBA
OCR Text	...ent Gain Flatness RF IN 1 3 RF OUT Ordering Information 2 GND RF2045 RF2045 PCBA General Purpose Amplifier Fully Assembled Evalua...GHz dB dB dB dB dB dB Condition T=25 C, ICC =65mA 4 GENERAL PURPOSE AMPLIFIERS Frequency ...
Description	GENERAL PURPOSE AMPLIFIER
File Size	66.49K / 6 Page	View it Online	Download Datasheet

				LINEAR[Linear Integrated Systems]
Part No.	SD210DE SST823 SST824 SD5001N SD5401CY SST215
OCR Text	... using digitized remote control 3. Data acquisition (highspeed, low charge injection, low leakage): -High-speed sample-and-holds -Audio and ...GHz can be controlled. Linear Integrated Systems, Inc. 4042 Clipper Ct. Fremont, CA 94538 Tel:...
Description	Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
File Size	353.61K / 11 Page	View it Online	Download Datasheet

For 3-ghz Found Datasheets File :: 27270 Search Time::2.078ms
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