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Infineon Technologies A...
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Part No. |
IPB120P04P4L-03
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OCR Text |
...a gate source voltage v gs - 16 3) v power dissipation p tot t c =25?c 136 w operating and storage temperature t j , t stg - -55 ... +175 c ...32v, v gs =0v, t j =25c - -0.05 -1 a v ds =-32v, v gs =0v, t j =125c 2) - -20 -200 gate-source leaka... |
Description |
P-channel - Logic Level - Enhancement mode
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File Size |
248.97K /
9 Page |
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it Online |
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Infineon Technologies A...
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Part No. |
AUIRF4104STRL
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OCR Text |
...-source on-resistance ??? 4.3 5.5 m ??? v gs = 10v, i d = 75a ?? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs ...32v q gd gate-to-drain charge ??? 27 ??? v gs = 10v ? t d(on) turn-on delay time ??? 16 ... |
Description |
AUTOMOTIVE GRADE
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File Size |
691.52K /
12 Page |
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it Online |
Download Datasheet |
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