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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4R881869D K4R571669D
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OCR Text |
...w latency are required. The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use o...pin assignments of the center-bonded RDRAM package. The mechanical dimensions of this
Direct RDRA... |
Description |
256/288Mbit RDRAM(D-die)
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File Size |
309.27K /
20 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
K4R571669M
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OCR Text |
... latency are required. the 256/288-mbit direct rambus drams (rdram a ) are extremely high-speed cmos drams organized as 16m words by 16 o...pin assignments of the center-bonded rdram package. the mechanical dimensions of this package are ... |
Description |
Direct RDRAM?Data Sheet
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File Size |
342.22K /
20 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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Part No. |
UPC2762TB-E3-A UPC2762TB
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OCR Text |
...0.291 0.292 0.284 0.280 0.285 0.288 0.288 0.285 0.282 0.285 0.288 0.291 0.286 0.282 0.282 0.282 0.278 0.268 0.260 0.251 0.248 0.237 0.222 0....PIN DESCRIPTIONS
Pin No. 1 Pin Name Input Applied Voltage (V) - Description Signal input pin. An in... |
Description |
3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
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File Size |
154.50K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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