24.9-ohm pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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24.9-ohm Datasheet PDF File

For 24.9-ohm Found Datasheets File :: 12340 Search Time::3.735ms
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				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	... 6-32 or M3 screw. Max. 600 24 13 48 48 9.3 20 2500 63 25 -55 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbfin ( 0.55-0.8 Nm) Units V A s V VRMS W C Thermal Resistance Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...= 1 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V Min 30 Typ Max Units V Off Charact...9.5 A VGS=10 V, ID =11.5A, TJ=125C VGS = 10 V, VDS = 15 V, VDS = 5 V ID = 11.5 A 1 2 -3.3 9.5 ...
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	... -- -- 0.1 -- -- 200 Max. 0.24 0.35 -- 4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA100TS120U Electrical Chara...9 VGE = 15V, IC = 100A -- 2.2 -- V VGE = 15V, IC = 100A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...W N. m g www.irf.com 1 4/24/2000 GA125TS120U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on)...9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction ...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...W N. m g www.irf.com 1 4/24/2000 GA50TS120U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) ...9 4.1 V IF = 50A, VGE = 0V -- 2.7 -- IF = 50A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...W N. m g www.irf.com 1 4/24/2000 GA75TS120U Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Un...9 -- V VGE = 15V, IC = 75A, TJ = 125C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 750...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...- 0.32 0.48 4.3 9.1 23 31 19 24 0.45 0.68 14 35 47 29 35 S ns ns ns ns nC - 5.1 12 - nC nC 5-2 IRF234, IRF235, IRF236, IRF237 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Tr...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...ing Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 ...9 6 3 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	....0 MAX -4 -25 -250 100 0.150 24 160 100 70 120 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown V...9 150 0.7 1.5 300 1.5 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitiv...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...cified IRF9520 -100 -100 -6 -4 -24 20 40 0.32 370 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Volt...9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent o...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

For 24.9-ohm Found Datasheets File :: 12340 Search Time::3.735ms
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