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  20.0-ohm Datasheet PDF File

For 20.0-ohm Found Datasheets File :: 14544    Search Time::1.297ms    
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    AD5235 AD5235BRU25 AD5235BRU250

ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
Part No. AD5235 AD5235BRU25 AD5235BRU250
OCR Text ... AD5235 Min -1 -2 -30 50 50 200 ELECTRICAL CHARACTERISTICS 25K, 250K OHM VERSIONS (VDD = +3V10% or +5V10% and VSS=0V, VA Parameter Resistor Differential NL2 Resistor Nonlinearity2 Nominal resistor tolerance Resistance Temperature C...
Description Audio digital potentiometers DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16
Nonvolatile Memory/ Dual 1024 Position Digital Potentiometers
RES MF 1/8W 160K 1% 2PPM
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers

File Size 100.47K  /  10 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...0 s 10 1 100 s 1 ms 200 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10 1 10 0 10 ms DC 10 2 10 3 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 90 A Transient ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...es 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ult...Ohm VGE = 15V VCC = 720V 100 IC = 200 A IC = 100 A IC = 50 A 40 10 30 10 20 30 40 50 ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...es 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ult...Ohm VGE = 15V VCC = 720V IC = 250 A 100 60 IC = 125 A IC = 62.5 A 50 40 0 10 20 30 4...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...es 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ult...Ohm VGE = 15V VCC = 720V IC = 100 A IC = 50 A IC = 25 A 20 10 18 16 14 0 10 20 ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...es 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ult...Ohm) ( ) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C )...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...SOURCE 300 ON RESISTANCE () 250 200 150 100 50 0 0 -20 -40 -60 -80 -100 ID, DRAIN CURRENT (A) VGS = - 20V VGS = -10V NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.2 VGS = 10V, ID = -25A 1.8 1.4 1.0 0.6 0.2 -40 0 40 8...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ... 0.500 2 25 50 50 50 16 9 7 300 200 50 3.5 MAX -4 -25 -250 100 0.600 50 100 100 100 22 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Curren...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text 200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ...ss Otherwise Specified IRF9620 -200 -200 -3.5 -2 -14 20 40 0.32 290 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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For 20.0-ohm Found Datasheets File :: 14544    Search Time::1.297ms    
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