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  20-520mhz Datasheet PDF File

For 20-520mhz Found Datasheets File :: 342    Search Time::1.297ms    
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    EUROQUARTZ LTD
Part No. EM14GT28-125.0-2.0/-3075 EM14GT3-125.0-2.0/-3075 EM14GT28-125.0-2.0/-2070 EM14GT28-155.520-2.0/-2070 EUROQUARTZLTD-EM14GT28-12.8-0.5/050 EM14GT33-14.4-2.0/-2070 EM14GT28-14.4-2.5/-2070
OCR Text ...2, 19.440, 19.68, 25.0, 20.0, 27.0, 38.880, 40.0, 77.760, 125.0, 155.520 ( partial list ) operating temperature rang...520mhz 26ma 35ma 50ma input voltage & current consumption frequency stability (ppm) 0.5 1.0 1.5 2.0 ...
Description TCXO, CLOCK, 125 MHz, HCMOS OUTPUT
TCXO, CLOCK, 155.52 MHz, HCMOS OUTPUT
TCXO, CLOCK, 14.4 MHz, HCMOS OUTPUT

File Size 136.30K  /  1 Page

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    RD02MUS211

Mitsubishi Electric Semiconductor
Part No. RD02MUS211
OCR Text ...mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po=2w(pin control) f=520mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limits and conditions are subj...
Description RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

File Size 426.98K  /  9 Page

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    RA55H4452M-101 RA55H4452M11

Mitsubishi Electric Semiconductor
Part No. RA55H4452M-101 RA55H4452M11
OCR Text ...55w (v gg control), load vswr=20:1 no degradation or destroy ? all parameters, conditions, ratings, and limi ts are subject to change ...520mhz 55w 12.5v, 3 stage amp. for mobile radio publication da te : oct.2011 3 typical p...
Description RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 246.36K  /  9 Page

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    RA30H4552M1 RA30H4552M1-101

Mitsubishi Electric Semiconductor
Part No. RA30H4552M1 RA30H4552M1-101
OCR Text ... (v gg c ontr ol), l oad vswr = 20 :1 no degradation or destroy ? all parameters, conditions, ratings, and limits are subject to change with...520mhz v dd =12.5v v gg =5v p out gp i dd 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (...
Description RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 240.87K  /  9 Page

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    RA30H4552M110

Mitsubishi Electric Semiconductor
Part No. RA30H4552M110
OCR Text ...4552 m 1 ra 30h45 52 m 1 25 jun 20 10 2 / 9 electrostatic sensitive device observe handling precautions maximum ratings ( t case =+25 c , z ...520mhz v dd =12.5v v gg =5v p out gp i dd 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (...
Description 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 187.99K  /  10 Page

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    RA07N4452M-101 RA07N4452M10

Mitsubishi Electric Semiconductor
Part No. RA07N4452M-101 RA07N4452M10
OCR Text ....5w (v gg control), load vswr=20:1 no degradation or destroy all parameters, conditions, ratings, and limits are subject to change w...520mhz, v dd =9.6v, v gg =3.5v p out gp i dd 0 5 10 15 20 2 4 6 8 10 12 14 drain voltage v dd (v) ou...
Description RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO

File Size 141.90K  /  9 Page

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    RD07MVS2 RD07MVS211

Mitsubishi Electric Semiconductor
Part No. RD07MVS2 RD07MVS211
OCR Text ...z,idq=700ma,zg=50 ? , load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po=7w( pin control ), f=520mhz,idq=750ma,zg=50 ? , load vswr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions ...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 443.38K  /  10 Page

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    RD07MVS1 RD07MVS111

Mitsubishi Electric Semiconductor
Part No. RD07MVS1 RD07MVS111
OCR Text ... to source vo ltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 1.5 w id drain current - 3 a t ch junc...520mhz,idq=750ma,zg=50 ? load vswr=20:1(all phas e) no destroy - note: above parameters, ratings, li...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

File Size 422.30K  /  10 Page

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    M68732SH 68732SH

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M68732SH 68732SH
OCR Text ...TLINE DRAWING 300.2 26.60.2 21.20.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.50.1 1 5 1 2 3 4 4 5 0.45 61 13.71 18.8...520MHz PO 70 65 60 55 50 45 40 35 30 25 20 530 4 3 2 1 0 -10 -5 0 5 10 15 T (fL) T (fH) 40 30 20 10 ...
Description RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
From old datasheet system

File Size 22.09K  /  2 Page

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    SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. PD54003-PD PD54003-PD54003S XPD54003S PD54003 PD54003S XPD54003 -XPD54003S
OCR Text ...rage Temperature 0 Value 25 20 4 52.8 165 -65 to 165 Unit V V A W 0C 0C THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Re...520MHz 3 500MHz 12 520MHz 2 Vdd=7.5V Idq=50 mA 10 Vdd=7.5V Idq=50mA 1 8 0 0...
Description    RF POWER TRANSISTORS The LdmoST Plastic FAMILY
RF POWER TRANSISTORS The LdmoST Plastic FAMILY 射频功率晶体管LdmoST塑料家庭

File Size 114.50K  /  10 Page

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For 20-520mhz Found Datasheets File :: 342    Search Time::1.297ms    
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