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  2.5ghz Datasheet PDF File

For 2.5ghz Found Datasheets File :: 2309    Search Time::1.516ms    
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    TMD7185-2

Toshiba Semiconductor
Part No. TMD7185-2
OCR Text 2 FEATURES n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain Supply Vol...
Description    MICROWAVE POWER MMIC AMPLIFIER

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    CPPD-0.85-2

CRYSTEK CORPORATION
Part No. CPPD-0.85-2
OCR Text ...e Input Frequency Range 0.85 to 2.0 GHz Output Frequency Range 1.7 to 4.0 GHz CrysTeK PoCKeT Passive Doubler Part Number: CPPD-0.85-2 Inp...5GHz 6GHz 40 40 45 1GHz 2GHz 3GHz Output Frequency 4GHz 5GHz 6GHz Conversion Loss @ +15dBm Inp...
Description Crystek POCKET Passive Doubler

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    EIA1111-2

Excelics Semiconductor, Inc.
Part No. EIA1111-2
OCR Text 2 UPDATED 02/17/2006 11.0-11.5 GHz 2-Watt Internally Matched Power FET .060 MIN. Excelics EIA1111-2 .060 MIN. FEATURES * * * * * * 11.0- 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at...
Description 11.0-11.5 GHz 2-Watt Internally Matched Power FET

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    TIM1414-2-252

Toshiba Semiconductor
Part No. TIM1414-2-252
OCR Text 2-252 TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN G1dB=6.0 dB at 13.75 GHz to 14.5 GHz BROAD BAN...5GHz add Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (...
Description HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz

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    JXMBGF-T-2-2400-2500 JXMBGF-T-3-2400-2500 JXMBGF-T-4-2400-2500

American Accurate Components, Inc.
Part No. JXMBGF-T-2-2400-2500 JXMBGF-T-3-2400-2500 JXMBGF-T-4-2400-2500
OCR Text 2.4~2.5ghz Power Divider The content of this specification may change without notification 7/01/09 Power Divider 2.4~2.5ghz Power Divider Applications WLAN 2.4GHz Communication systems Features Low Insertion Loss, High Isolation, B...
Description 2.4~2.5ghz Power Divider

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    TIM1415-2

Toshiba Semiconductor
Part No. TIM1415-2
OCR Text 2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 14.5GHz to 15.0GHz n HIGH GAIN G1dB=6.0dB at 14.5GHz to 15.0GHz n HERMETICALLY SEALED PACKAGE n BROAD BAND INTERNALLY MATCHED RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTER...
Description MICROWAVE POWER GaAs FET

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    MS-156-HRMJ-2 MS-156-HRMJ-3 MS-156-HRMJ-5 MS-156-HRMJ-6 MS-156LP-HRMJ-1 MS-156 MS-156_02 MS-156-C_LP-1 MS-156-C_LP-2 MS-

HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
Part No. MS-156-HRMJ-2 MS-156-HRMJ-3 MS-156-HRMJ-5 MS-156-HRMJ-6 MS-156LP-HRMJ-1 MS-156 MS-156_02 MS-156-C_LP-1 MS-156-C_LP-2 MS-156-HRMJ-9 MS-156-CLP-1 MS-156-CLP-2 MS-15602
OCR Text ...z (not mated with the plug). 2. Space-saving design 2.7 mm x 2.7 mm occupied board space. MS-156 3. Low profile 1.6 mm protrusion...5GHz) 1.3 max.(2.5ghz to 6.0GHz) 1.4 max.(DC to 3.0GHz) 1.8 max.(3.0GHz to 6.0GHz) V.S.W.R Ite...
Description Subminiature Coaxial Switch 1.6 mm High, DC to 6 GHz 微型同轴开.6毫米高,直流6GHz
Subminiature Coaxial Switch 1.6 mm High, DC to 6 GHz 微型同轴开1.6毫米高,直流GHz

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    ZL4081 ZL40813 ZL40813DCE ZL40814 ZL40814DCE ZL40818 ZL40818DCE

ZARLINK[Zarlink Semiconductor Inc]
Part No. ZL4081 ZL40813 ZL40813DCE ZL40814 ZL40814DCE ZL40818 ZL40818DCE
OCR Text ...T B Vref Div N 400 Ohm INPUT 2 INPUT B 3 20mA GND 4 GND 5 Figure 1 - Functional Block Diagram 1 Zarlink Semiconductor Inc. Zarl...5GHz to 13.5Ghz fin = 10.5GHz to 13.5Ghz Data Sheet Differential Into 50ohm pullup resistors f...
Description 13.5GHz Fixed Modulus divide 16 Prescaler
13.5GHz Fixed Modulus Dividers

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    EIC1414-8

Excelics Semiconductor, Inc.
Part No. EIC1414-8
OCR Text ...ff Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 38.5 4.0 TYP 39.0 5.0 MAX ...5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1) Tested with 100 Ohm gate resistor. ...
Description 14.0-14.5 GHz 8-Watt Internally Matched Power FET

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    EIC1414-12

Excelics Semiconductor, Inc.
Part No. EIC1414-12
OCR Text ...ff Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. 1,2 Caution! ESD sensitive device. MIN 39.5 4.0 TYP 40.5 5.0 MA...5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA Note: 1) Tested with 50 Ohm gate resistor. ...
Description 14.0-14.5 GHz 12-Watt Internally Matched Power FET

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