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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH8S64DBKG-8L MH8S64DBKG-7 MH8S64DBKG-7L MH8S64DBKG-8 B99062
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| OCR Text |
...0,1(Bank Address) /CAS latency- 2/3(programmable)
FEATURES
Frequency -7,-7L -8,-8L 100MHz 100MHz CLK Access Time
(Component SDRAM)
Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Colum... |
| Description |
From old datasheet system
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
684.04K /
55 Page |
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it Online |
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Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
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| Part No. |
V436616Y24VATG-75PC
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| OCR Text |
...ing s Programmable (CAS Latency:2, 3 Clocks)
CILETIV LESOM
Features
1
Description
The V436616Y24VATG-75PC memory module is organize...4M x 16
4M x 16
59
61
143
Pin 2 on Backside
Pin 144 on Backside
V436616Y24VATG-... |
| Description |
3.3 VOLT 16M x 64 HIGH PERFORMANCE 133 MHZ SDRAM UNBUFFERED SODIMM 3.36米x 64高性能133 MHz的内存缓冲的SODIMM
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| File Size |
73.20K /
12 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
-7L -8 -8L
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| OCR Text |
...0,1(Bank Address) /CAS latency- 2/3(programmable)
FEATURES
Frequency -7,-7L -8,-8L 100MHz 100MHz CLK Access Time
(Component SDRAM)
Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Colum... |
| Description |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
730.05K /
55 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
MH8S64BBKG-8L
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| OCR Text |
...ck rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(programma...4m x 16 synchronous drams tsop and industry standard eeprom in tssop 144-pin (72-pin dual in-line pa... |
| Description |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
591.31K /
55 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
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| Part No. |
MH8S64DBKG-7L
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| OCR Text |
...ck rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(programma...4m x 16 synchronous drams tsop and industry standard eeprom in tssop 144-pin (72-pin dual in-line p... |
| Description |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM 536870912位（8388608 -文字4位）SynchronousDRAM
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| File Size |
700.00K /
55 Page |
View
it Online |
Download Datasheet |
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