12 10ns pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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12 10ns Datasheet PDF File

For 12 10ns Found Datasheets File :: 5442 Search Time::1.672ms
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				TMT[Taiwan Memory Technology]
Part No.	T35L3232B T35L3232B-3.8Q T35L3232B-4T
OCR Text	...DQ32 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 TE CH Preliminary T35L3232B PIN ASSIGNMENT (Top View) ADSC ADSP BWE BW4 BW3 BW2 BW1 VCC ADV VSS CE2 CE2 CLK GW OE CE A8 A6 A7 A9 100 9 9 9...
Description	32K x 32 SRAM
File Size	256.87K / 19 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	5962F9675601VPA HS-1120RH FN4101 HFA1100IJ HFA11XXEVAL
OCR Text	... +25oC TYPICAL 2 10 46 50 25 40 12 40 200 50 16 2.2 4 18 21 3.0 500 3.3 3.0 65 50 0.1 24 580 850 670 1500 2300 220 0.014 0.05 0.14 0.6 -55 -49 -44 -84 -70 -57 30 20 -70 -60 -32 UNITS mV V/oC dB dB A nA/oC A nA/oC A k pF nV/Hz pA/Hz pA/Hz V...
Description	Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust(抗辐射超高速电流反馈放大器（可调节漂移 Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust From old datasheet system
File Size	118.01K / 11 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	CD22M3493 CD22M3493E CD22M3493Q
OCR Text	12 x 8 x 1 BiMOS-E Crosspoint Switch [ /Title () /Subject () /Autho () /Keyords ) /Cretor () /DOCI FO dfark The Intersil CD22M3493 is an a...10ns RIN = 1K, ROUT = 10k \|\| 10pF MIN TYP 50 MAX UNITS MHz PARAMETER Frequency Response Channel O...
Description	12 x 8 x 1 BiMOS-E Crosspoint Switch
File Size	36.70K / 6 Page	View it Online	Download Datasheet

				ANALOG DEVICES INC AD[Analog Devices] Analog Devices, Inc.
Part No.	CMP4014444 CMP40102 CMP402GS CMP401 CMP401GRU CMP401GS CMP402 CMP402GRU CMP401GS-REEL ANALOGDEVICESINC-CMP401GSZ CMP402-15
OCR Text	... Scale) 14 DIG GND 13 V- ANA 12 -IN D 11 +IN D 10 -IN C 9 +IN C CMP401/ 402 TOP VIEW (Not to Scale) CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human bo...
Description	23 ns Low Voltage Comparator 23 ns and 65 ns Low Voltage Comparators
File Size	127.06K / 8 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD[Analog Devices]
Part No.	CMP401 CMP401GP CMP401GRU CMP401GS CMP402 CMP402GP CMP402GRU CMP402GS
OCR Text	...(RU) JA 3 JC 3 4 5 14 13 12 6 11 7 8 9 10 Units C/W C/W C/W CMP401/CMP402 Die Size 0.065 x 0.069 inch, 4,485 sq. mils Substrate (Die Backside) Is Connected to V+ Transistor Count 104. V+ ANA V+ DIG 90 113 180 ...
Description	23 ns and 65 ns Low Voltage Comparators
File Size	127.13K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP5061 HIP5061DS
OCR Text	...A IVC = 0A, VC = VFB 6 13.3 5.0 12 24 0 1 14 5.1 18 31 10 2 15 5.2 mA mA A mA V V DMOS TRANSISTOR rDS(ON) rDS(ON) IDSS IDSH CDRAIN Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source Leakage Current Average Dra...
Description	7A, High Efficiency Current Mode Controlled PWM Regulator
File Size	157.54K / 20 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	... A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 ...10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed o...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	... A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 ...10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed o...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	... x4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 ...10ns CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	... x8 x4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 ...10ns CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

For 12 10ns Found Datasheets File :: 5442 Search Time::1.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |