|
|
|
TOSHIBA[Toshiba Semiconductor]
|
Part No. |
GT5J301 GT5J301_07 GT5J30107
|
OCR Text |
... (Pb)-free finish.
1
2006-11-01
GT5J301
ELECTRICAL CHARACTERISTICS (Ta = 25C)
CHARACTERISTIC Gate Leakage Current Collector Cut-O...5A, VGE = 0 IF = 5A, di / dt = -100A / s TEST CONDITION VGE = 20V, VCE = 0 VCE = 600V, VGE = 0 IC ... |
Description |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
File Size |
477.50K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
Infineon
|
Part No. |
SGI02N120
|
OCR Text |
...=960v, i c =2a v ge =15v - 11 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e to-220ab - 7 - ...5a 6a 7a t c , case temperature t c , case temperature figure 3. power dissipation as a f... |
Description |
IGBTs & DuoPacks - 2A 600V TO 262 SMD IGBT
|
File Size |
324.52K /
13 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|