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  11.059 Datasheet PDF File

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...20 1020 168 196 26 111 19 17 57 11 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller ") Charge Turn-off Delay...059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...ont.]) Ohms A nA Volts rev- 11-99 050-5907 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VD...059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4....
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

File Size 39.43K  /  2 Page

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    APT8030B2VR

ADPOW[Advanced Power Technology]
Part No. APT8030B2VR
OCR Text ...O-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 100 ...059) 2.49 (.098) 5 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) ...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.13K  /  4 Page

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    APT8030 APT8030B2VFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030 APT8030B2VFR
OCR Text ...O-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 100 ...059) 2.49 (.098) 5 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm

File Size 60.47K  /  4 Page

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    APT8043BFLL APT8043SFLL

ADPOW[Advanced Power Technology]
Part No. APT8043BFLL APT8043SFLL
OCR Text ...T pF 2498 482 79 92 12 52 13 11 43 13 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller ") Charge Turn-off...059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 58.43K  /  2 Page

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    APT8043BLL APT8043SLL

ADPOW[Advanced Power Technology]
Part No. APT8043BLL APT8043SLL
OCR Text ...99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 9-2001 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.1...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.49K  /  2 Page

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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text ...j = 25C Tj = 125C 0.7 1.8 11 17 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characterist...059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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    APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL

ADPOW[Advanced Power Technology]
Part No. APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text ...99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 8-2001 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.1...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.71K  /  2 Page

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    APT8056BVFR

ADPOW[Advanced Power Technology]
Part No. APT8056BVFR
OCR Text ...O-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 50 VGS, GATE-...059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.50K  /  4 Page

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    APT8056BVR

ADPOW[Advanced Power Technology]
Part No. APT8056BVR
OCR Text ...mps Volts ns C 16 64 1.3 750 11 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) ...059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.19K  /  4 Page

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