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10100 Datasheet PDF File

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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	10100 Features * Low Noise Figure: 0.5 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P1 dB at 4 GHz chip. Its premium noise figure makes ...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HOKURIKU ELECTRIC INDUSTRY CO.,LTD HOKURIKU ELECTRIC INDUS...
Part No.	E011404 FCR20-100JB FCR20-100JE FCR20-100JV FCR16-100JV FCR16-100JE FCR16-100JB FCR32-100JV FCR35-100JV FCR35-100JE FCR32-100JB FCR32-100JE FCR35-100JB FCR50-100JV FCR50-100JE FCR50-100JB
OCR Text	...se. fcr50 fcr50 fcr50 fcr50 10100 10100 10100 10100 4.50 4.50 4.50 4.50 fcr35 fcr35 fcr35 fcr35 5.127 5.127 5.127 5.127 fcr16 fcr16 fcr16 fcr16 5.633 5.633 5.633 5.633 2.00 2.00 2.00 2.00 1sec.<tQ60sec. 1sec.<tQ60se...
Description	Flat Type Chip Fuse Resistor
File Size	243.43K / 2 Page	View it Online	Download Datasheet

				Micro Commercial Compon... Micro Commercial Components Corp. Micro Commercial Components, Corp.
Part No.	SBL1050 SBL1040 SBL10100 SBL1020 SBL1030
OCR Text	... 1080-10100 .85v 0.5m a t c...
Description	10 Amp Schottky Barrier Rectifier 20 to 100 Volts 10安培肖特基整流器20100伏特
File Size	387.07K / 2 Page	View it Online	Download Datasheet

				Kersemi Electronic Co., Ltd. Kersemi Electronic Co., Ltd...
Part No.	MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W MBRB10100-E38W MBR10100
OCR Text	10100 www.kersemi.com 476 features ? trench mos schottky technology ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020, lf max...
Description	Trench MOS Schottky technology
File Size	1,934.49K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP30K3DPP-M0
OCR Text	...eration area 1000 100 10 0. 11 10100 1 0.1 0.01 1000 0 0 100 80 60 50 20 0 0 0 0 2 468 10 0 0 48 12 20 16 collector to emitter saturation v oltage vs. gate to emitter v oltage ( typical) collector to emitter saturation v oltage vs. coll...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	88.71K / 7 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP30K3DPP-M0
OCR Text	...eration area 1000 100 10 0. 11 10100 1 0.1 0.01 1000 0 0 100 80 60 50 20 0 0 0 0 2 468 10 0 0 48 12 20 16 collector to emitter saturation v oltage vs. gate to emitter v oltage ( typical) collector to emitter saturation v oltage vs. coll...
Description	N-Channel Power MOSFET
File Size	149.43K / 7 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard)
Part No.	ATF10100
OCR Text	... typical p 1 db at 4 ghz atf-10100 chip outline electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. nf o optimum noise figure: v ce = 2 v, i ds = 25 ma f = 2.0 ghz db 0.4 f = 4.0 ghz...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
File Size	38.42K / 4 Page	View it Online	Download Datasheet

				Vishay Semiconductors
Part No.	MBRF1090-E3/4W
OCR Text	10100 vishay general semiconductor document number: 89034 revision: 24-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vi...
Description
File Size	129.61K / 5 Page	View it Online	Download Datasheet

				Vishay社区
Part No.	MBRB1090-E3/4W
OCR Text	10100 vishay general semiconductor document number: 89034 revision: 27-aug-07 www.vishay.com 1 high-voltage schottky rectifier features ? trench mos schottky technology ? lower power losses, high efficiency ? low forward voltage drop ...
Description
File Size	143.20K / 5 Page	View it Online	Download Datasheet

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