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  0838E Datasheet PDF File

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    K4H560838E-GCCC K4H560838E-GCC4

Samsung semiconductor
Part No. K4H560838E-GCCC K4H560838E-GCC4
Description    256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

File Size 198.99K  /  18 Page

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HUA FENG CIRCUIT





    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
Description DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

File Size 195.42K  /  18 Page

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    Samsung Semiconductor Co., Ltd.
Part No. K4H560438E-ZLB30 K4H560838E-ZLB30
Description 64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60

File Size 385.02K  /  24 Page

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    K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-G

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
Description DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
   256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

File Size 245.98K  /  24 Page

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    K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/LB0 K4H560838E-NC/LB0 K4H560438E-NC/LB3 K4H560838E-NC/LB3 K4H560438E-N

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/LB0 K4H560838E-NC/LB0 K4H560438E-NC/LB3 K4H560838E-NC/LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560838E-NCA2 K4H560438E-NCB3 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLB0 K4H560438E-NLB3 K4H560438E-NLB0 K4H560838E-NLB3 K4H560838E-NLA2
Description 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
   256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

File Size 216.89K  /  24 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-ZLB3 K4H560438E-ZC K4H560438E-ZC_LA2 K4H560438E-ZC_LB0 K4H560438E-ZC_LB3 K4H560438E-ZCA2 K4H560438E-ZCB0 K4H560438E-ZCB3 K4H560438E-ZLA2 K4H560438E-ZLB0 K4H560438E-ZLB3 K4H560838E-ZC_LA2 K4H560838E-ZC_LB0 K4H560838E-ZC_LB3 K4H560838E-ZCA2 K4H560838E-ZCB0 K4H560838E-ZCB3 K4H560838E-ZLA2 K4H560838E-ZLB0
Description 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

File Size 355.74K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-VLB3 K4H560438E-VC K4H560438E-VC_LA2 K4H560438E-VC_LB0 K4H560438E-VC_LB3 K4H560438E-VCA2 K4H560438E-VCB0 K4H560438E-VCB3 K4H560438E-VLA2 K4H560438E-VLB0 K4H560438E-VLB3 K4H560838E-VC_LA2 K4H560838E-VC_LB0 K4H560838E-VC_LB3 K4H560838E-VCA2 K4H560838E-VCB0 K4H560838E-VCB3 K4H560838E-VLA2 K4H560838E-VLB0
Description 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)

File Size 294.46K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
Description 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

File Size 241.25K  /  24 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4H560438E-NC_LB0 K4H560438E-NC_LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560438E-NCB3 K4H560438E-NLA2 K4H560438E-NLB0 K4H560438E-NLB3 K4H560838E-NC_LA2 K4H560838E-NC_LB0 K4H560838E-NC_LB3 K4H560838E-NCA2 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLA2 K4H560838E-NLB0
Description 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

File Size 212.16K  /  24 Page

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    K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K4H560838E-TC_LAA K4H560838E-TC_LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB0 K4H560838E-TC/LB3
Description DDR SDRAM 256Mb E-die (x4, x8)

File Size 211.78K  /  24 Page

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