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Cystech Electonics Corp...
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| Part No. |
MTB2D5N03BE3-0-UB-X
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| OCR Text |
...package shipping mtb2d5n03be3-0-ub-x to-220 (rohs compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton g gate d drain...140 160 180 200 012345 v ds , drain-source voltage(v) i d , drain current (a) 10v, 9v,8v,7v,6v v gs ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
348.91K /
8 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB08N04J3-0-T3-G
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| OCR Text |
... package shipping mtb08n04j3-0-t3-g to-252 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel mtb0...140 avalanche current i as 18 a avalanche energy @ l=1mh, i d =18a, r g =25 e as 162 mj ... |
| Description |
N -Channel Enhancement Mode Power MOSFET
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| File Size |
312.86K /
9 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6414AL
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| OCR Text |
...urce voltage avalanche energy l=0.05mh c mj avalanche current c 10 a 35 a t a =25c i dsm a t a =70c 140 pulsed drain current c continuous drain current i d 50 30 t c =25c t c =100c power dissipation b p d continuous drain current 31 13 ... |
| Description |
30V N-Channel MOSFET
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| File Size |
375.25K /
6 Page |
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it Online |
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Kersemi Electronic Co.,...
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| Part No. |
MBR20H100CT-E1
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| OCR Text |
... features low forward voltage: 0.64v @ 125 o c high surge capacity 175 o c operating junction temperature 20a total (10a each diode leg...140 150 160 170 180 0 2 4 6 8 10 12 14 i av , average foward current (a) case temperature ( o c) s... |
| Description |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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| File Size |
4,089.48K /
10 Page |
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it Online |
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Alpha & Omega Semicondu...
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| Part No. |
AOD492
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| OCR Text |
0.8 1.5 2.5 w t a =70c 1.6 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d continuous drain current b maxi...140 160 180 200 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 3.5v v gs =3.... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
157.42K /
7 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FGA20S120M
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| OCR Text |
...esistance, junction to case -- 0.43 o c / w r jc (diode) thermal resistance, junction to case -- 0.43 o c / w r ja thermal resistance, j...140 20v 10v v ge = 7v 8v 17v t c = 25 o c 15v 12v 9v collector current, i c [a] collector-emitt... |
| Description |
40 A, 1200 V, N-CHANNEL IGBT
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| File Size |
780.37K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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