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VISAY[Vishay Siliconix]
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| Part No. |
SUP90N10-09
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| OCR Text |
...BR)DSS (V)
100
rDS(on) (W)
0.0094 @ VGS = 10 V
ID (A)
90 a
D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Package...09
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
... |
| Description |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
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| File Size |
39.74K /
5 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUM110N10-09-E3 SUM110N10-09
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| OCR Text |
...BR)DSS (V)
100
rDS(on) (W)
0.0095 @ VGS = 10 V
ID (A)
110 a
D D D D
TrenchFETr Power MOSFET 200_C Junction Temperature New Pa...09 SUM110N10-09-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTH... |
| Description |
TERMINAL
N-Channel 100-V (D-S) 200C MOSFET
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| File Size |
59.96K /
5 Page |
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it Online |
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ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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| Part No. |
STP80N05-09
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| OCR Text |
...s s
VDS S 50 V
RDS(o n) < 0.009
ID 80 A
ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 m AVALANCHE RUGGED TECHNOLOGY LOW GAT...09
THERMAL DATA
Rt hj-case R th j-amb Rthc-sink Tl Thermal Resist ance Junc tion-case Max Thermal ... |
| Description |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
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| File Size |
113.50K /
9 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-09 SPB80N06S2L-09
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| OCR Text |
...JC RthJA RthJA -
Values typ. 0.52 max. 0.8 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...09
SPP80N06S2L-09 SPB80N06S2L-09
Electrical Characteristics Parameter Dynamic Characteristics Tr... |
| Description |
Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
310.79K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-09 SPB80N06S2-09
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| OCR Text |
...JC RthJA RthJA -
Values typ. 0.52 max. 0.8 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...09
SPP80N06S2-09 SPB80N06S2-09
Electrical Characteristics Parameter Dynamic Characteristics Tran... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor
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| File Size |
315.81K /
8 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
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| Part No. |
SB80-09
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| OCR Text |
...
* Low forward voltage (VF max=0.85V). * Fast reverse recovery time (trr max=40ns). * Low switching noise. * Low leakage current and high r...09
No.2686-2/3
SB80-09
No products described or contained herein are intended for use in su... |
| Description |
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 8A Rectifier
90V/ 8A Rectifier
90V, 8A Rectifier 90V的，8A条整流器
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| File Size |
70.96K /
3 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
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| Part No. |
SB50-09
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| OCR Text |
...
* Low forward voltage (VF max=0.85V). * Fast reverse recovery time (trr max=35ns). * Low switching noise. * Low leakage current and high r...09
No.2685-2/3
SB50-09
No products described or contained herein are intended for use in su... |
| Description |
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 5A Rectifier
90V/ 5A Rectifier
90V, 5A Rectifier(高频整流应用的重复反向电0V，平均整流电A 整流
90V, 5A Rectifier(高频整流应用的重复反向电0V，平均整流电5A 整流
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| File Size |
72.87K /
3 Page |
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it Online |
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Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
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| Part No. |
SB300-09
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| OCR Text |
...
* Low forward voltage (VF max=0.85V). * Fast reverse recovery time (trr max=70ns). * Low switching noise. * Low leakage current and high r...09
No.2691-2/3
SB300-09
No products described or contained herein are intended for use in s... |
| Description |
90V/ 30A Rectifier
90V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
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| File Size |
78.83K /
3 Page |
View
it Online |
Download Datasheet |
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