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  0.036 Datasheet PDF File

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    BFS17AR BFS17AW BFS17A

Vishay Siliconix
Vishay Telefunken
Part No. BFS17AR BFS17AW BFS17A
OCR Text ...t-off current VCE = 25 V, VBE = 0 Collector-base cut-off current VCB = 10 V, IE = 0 Emitter-base cut-off current VEB = 2.5 V, IC = 0 Collect...036 0.054 0.081 0.100 0.119 0.149 0.181 0.207 0.016 0.035 0.053 0.081 0.100 0.120 0.149 0.181 0.207 ...
Description From old datasheet system
Silicon NPN Planar RF Transistor

File Size 163.18K  /  10 Page

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    FAN1589 FAN1589MX FAN1589MCX FAN1589DX

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FAN1589 FAN1589MX FAN1589MCX FAN1589DX
OCR Text ... at up to 2.7A Load regulation: 0.05% typical Trimmed current limit On-chip thermal limiting Standard TO-220, TO-263, TO-263 center cut and ...036 Millimeters Min. 4.06 0.51 Max. 4.83 0.91 Notes: 1. Dimensions are exclusive of mold flash and m...
Description FETs - Nch 700V<VDSS; Surface Mount Type: N; Package: TO-220NIS; R DS On (&#206;&#169;): (max 6.4); P D (W): (max 2.5)
FETs - Nch 700VFETs - Nch 700V2.7A/ 1.2V Low Dropout Linear Regulator for VRM8.5
2.7A, 1.2V Low Dropout Linear Regulator for VRM8.5
FETs - Nch 700V<VDSS; ; Package: TO-3P(N)IS; R DS On (&#206;&#169;): (max 1.4); P D (W): (max 8)

File Size 80.93K  /  12 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ... P-CHANNEL MOSFET RDS(on) 0.029 0.058 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...036 V GS = 4.5V 1.5 0.032 1.0 0.028 0.5 0.024 V GS = 10V 0.0 -60 -40 -20 ...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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    IRF740S 6111

STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
Part No. IRF740S 6111
OCR Text 0.48 - 10 A - D2PAK PowerMESHTM MOSFET TYPE IRF740S s s s s s s V DSS 400 V R DS(on) < 0.55 ID 10 A TYPICAL RDS(on) = 0.48...036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B ...
Description N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10A条,采用D2PAK PowerMESHTM MOSFET的(不适用沟道MOSFET的)
N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET)
From old datasheet system
N - CHANNEL 400V - 0.48 - 10 A -D 2 PAK PowerMESH TM MOSFET
N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET
N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET

File Size 92.44K  /  8 Page

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    NE4210S01 NE4210S01-T1 NE4210S01-T1B

NEC Corp.
NEC[NEC]
Part No. NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text ...ure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz * Gate Length: Lg 0.20 m * Gate Width : Wg = 160 m ORDERING IN...036 0.037 0.041 0.039 0.035 0.034 Mason's U dB 30.256 28.341 26.068 25.369 23.501 22.666 21.854 21.2...
Description X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 62.93K  /  16 Page

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    ZLNB100 ZLNB100N8 ZLNB100X

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZLNB100 ZLNB100N8 ZLNB100X
OCR Text ...emperature Storage Temperature -0.6V to 15V 50mA 25V Continuous -40 to 85C -40 to 85 Power Dissipation (Tamb= 25C) SO8 500mW MSOP8 500mW ...036 0.004 0.010 0.005 0.116 0.0256 0.0128 0.116 0.188 0.016 0 MAX 0.044 E 87 65 0.008 0.014 0.0...
Description DUAL POLARISATION SWITCH TWIN LNB MULTIPLEX CONTROLLER

File Size 76.50K  /  5 Page

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    ZLNB101 ZLNB101N8 ZLNB101X8

Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZLNB101 ZLNB101N8 ZLNB101X8
OCR Text ...emperature Storage Temperature -0.6V to 15V 50mA 25V Continuous -40 to 85C -40 to 85 Power Dissipation (Tamb= 25C) SO8 500mW MSOP8 500mW ...036 0.004 0.010 0.005 0.116 0.0256 0.0128 0.116 0.188 0.016 0 MAX 0.044 E 87 65 0.008 0.014 0.0...
Description M39012 MIL RF CONNECTOR SPECIALTY ANALOG CIRCUIT, PDSO8
DUAL POLARISATION SWITCH TWIN LNB MULTIPLEX CONTROLLER

File Size 76.03K  /  5 Page

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    FDZ202P

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDZ202P
OCR Text ...es *= -5.5 A, -20 V. RDS(ON) = 0.045 =@ VGS = -4.5 V RDS(ON) = 0.075 @ VGS = -2.5 V. *= Occupies only 5 mm2 of PCB area. Only 55% of the a...036 0.060 -1.5 0.045 0.075 -2.3 -1.2 V Drain-Source Diode Characteristics and Maximum Rati...
Description P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

File Size 34.32K  /  4 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...D2 2 VDSS = 30V RDS(on) = 0.029 3 6 4 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advance...036 V GS = 4.5V 1.5 0.032 1.0 0.028 0.5 0.024 V GS = 10V 0.0 -60 -40 -20 ...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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