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  -state Datasheet PDF File

For -state Found Datasheets File :: 203388    Search Time::5.641ms    
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    2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. 2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6X M27C64A-20C1TR M27C64A-20C1X M27C64A-20C6TR M27C64A-20C6X M27C64A-25C1TR M27C64A-25F6X M27C64A-25F6TR M27C64A-15C6X M27C64A-15F1X M27C64A-15F6X M27C64A-15C1TR M27C64A-15F6TR M27C64A-15C6TR M27C64A-15F1TR M27C64A-20F1TR M27C64A-25F1X M27C64A-25F1TR M27C64A-25C1X M27C64A-25C6TR M27C64A-25C6X M27C64A-15C1X
OCR Text STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100A PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING HIGH SPEED PROGRAMMING (less than 1 minute) 28 1 FDIP28W (F) PLCC32 (C) ...
Description 64K (8K x 8) UV EPROM and OTP ROM 64K的(8K的8)紫外线EPROM和检察官办公室光

File Size 97.89K  /  11 Page

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    Nexperia
Part No. PMZ320UPE
OCR Text ...eristics r dson drain-source on-state resistance v gs = -4.5 v; i d = -1 a; t j = 25 c - 430 510 m [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting p ad for drain 1 cm 2 . downloaded fro...
Description 30 V, P-channel Trench MOSFET

File Size 307.64K  /  15 Page

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    Nexperia
Part No. PMZ130UNE
OCR Text ...eristics r dson drain-source on-state resistance v gs = 4.5 v; i d = 1.8 a; t j = 25 c - 120 150 m [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for drain 1 cm 2 . downloaded from: http:/// ? ne...
Description 20 V, N-channel Trench MOSFET

File Size 314.36K  /  14 Page

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    Alpha & Omega Semiconductor
Part No. AON6234
OCR Text ..., t stg symbol t 10s steady-state steady-state r jc maximum junction-to-ambient a c/w r ja 14 40 17 v 20 gate-source voltage drain-source voltage 40 units junction and storage temperature range -55 to 150 c thermal characteristics pa...
Description Single MV MOSFETs (40V - 400V)

File Size 344.13K  /  6 Page

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    IRHMB57Z60

International Rectifier
Part No. IRHMB57Z60
OCR Text ...s(on) static drain-to-source on-state 0.0045 ? v gs = 12v, i d = 45a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 73 s ( ) v ds = 15v, i ds = 45a i...
Description 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 169.98K  /  8 Page

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    Alpha & Omega Semiconductor
Part No. AOTF288L
OCR Text ..., t stg symbol t 10s steady-state steady-state r jc 43 36 30 160 maximum junction-to-case pulsed drain current c continuous drain current g power dissipation a 15 t c =100c power dissipation b p d 46.5 17.5 -55 to 175 junction and ...
Description Single MV MOSFETs (40V - 400V)

File Size 376.85K  /  7 Page

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    Skyworks Solutions
Part No. SE2593A20
OCR Text ... amplifier as well as a bypass state, for use when high power signals are being received. designed for ease of use, all rf ports are matched to 50 ? to simplify pcb layout and the interface to the transceiver rfic. the se2593a20 a...
Description Dual Band 802.11n Wireless LAN Front End

File Size 723.83K  /  18 Page

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    Panasonic
Part No. MTM232230LBF
OCR Text ... features ? low drain-source on-state resistance : rds(on) typ = 20 m ? (vgs = 4.0 v) for switching ? halogen-free / rohs compliant panasonic smini3-g1-b (eu rohs / ul-94 v-0 / msl : level 1 compliant) ? marking symbol : 1.2. 3. pcs / ...
Description Other MOSFETs

File Size 243.06K  /  7 Page

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    Nexperia
Part No. 74LVTN16244BDGG
OCR Text state rev. 6 4 october 2018 product data sheet 1. general description the 74lvtn16244b is a high-performance bicmos product designed for v cc operation at 3.3 v. this device is a 16-bit buffer and line driver featuring non-inverting 3-st...
Description 3.3 V 16-bit buffer/driver; 3-state

File Size 193.79K  /  11 Page

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