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For attained Found Datasheets File :: 866 Search Time::1.578ms
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				Mitel Semiconductor MITEL[Mitel Networks Corporation] Mitel Networks, Corp.
Part No.	SP5054 SP5054KGDPAS SP5054SKGMPAS
OCR Text	...erates a flag when the loop has attained lock. `In lock' is indicated by high impedance state. The SP5054 contains 4 general purpose open collector outputs, ports P1-P4, which are capable of sinking at least 10mA. These outputs are set by t...
Description	2.6GHz 3-Wire BUS Controlled Synthesiser 2.6GHz线总线控制合成
File Size	278.28K / 9 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	DBA150
OCR Text	...d structure. * High reliability attained by glass passivation. * Peak reverse voltage:VRM=200, 600V. * Average rectified current:IO=15A. Package Dimensions unit:mm 1170 [DBA150] Specifications Absolute Maximum Ratings at Ta = 25C ...
Description	15.0A Single-Phase Bridge Rectifier
File Size	39.70K / 2 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1
OCR Text	...DS /dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s. 4 Motorola TMOS Power MOSFET Transistor Device Data MMFT2955E 15 V VGS 0 IFM 90% IS 10% ton IRM tfrr VDS(pk) VR VDS VdsL MAX. CSOA STRESS AREA 0.25 IRM dlS/dt trr ...
Description	1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
File Size	176.21K / 10 Page	View it Online	Download Datasheet

				Zarlink
Part No.	SP5024
OCR Text	...erates a flag when the loop has attained lock. `Out of lock' is indicated by high impedance state. The SP5024 contains 4 general purpose open collector outputs, ports P1-P4, which are capable of sinking at least 10mA. These outputs are set ...
Description	3-Wire Bus Controlled Synthesiser
File Size	172.93K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LA4500
OCR Text	...tortion at high frequencies are attained by connecting a series circuit of diode (DS442) and resistor (10k) across pin (6) and GND and the same across pin (15) and GND. Continued on next page. No.1164-4/12 LA4500 Continued from prece...
Description	5.3W 2-Channel AF Power Amplifier
File Size	628.40K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
Part No.	MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
OCR Text	...VDS/dt in excess of 10 V/ns was attained with dIs/dt of 400 A/s. 15 V VGS 0 IFM 90% IS 10% ton IRM 0.25 IRM VDS(pk) VR VDS dVDS/dt VdsL MAX. CSOA STRESS AREA dls/dt trr Vf Figure 15. Commutating Waveforms 4 - VR IFM + 20 V - IS...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
File Size	254.33K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
Part No.	FM27C040N150 FM27C040N90 FM27C040Q120 FM27C040Q150 FM27C040Q90 FM27C040QE120 FM27C040QE150 FM27C040QE90 FM27C040VE90 27C040 FM27C040 FM27C040N120 FM27C040NE120 FM27C040NE150 FM27C040NE90 FM27C040V120 FM27C040V150 FM27C040V90 FM27C040VE120 FM27C040VE150
OCR Text	...0.10V. Note 5: TRI-STATE may be attained using OE or CE . Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between VCC...
Description	4/194/304-Bit 512K x 8 High Performance CMOS EPROM 4,194,304-Bit 512K x 8 High Performance CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
File Size	103.95K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] PROM
Part No.	FM27C512Q FM27C512N90 FM27C512V120 FM27C512V150 FM27C512V90 FM27C512VE120 FM27C512VE150 FM27C512Q150 FM27C512 FM27C512N120 FM27C512N150 FM27C512NE120 FM27C512NE150 FM27C512Q120 FM27C512Q90 FM27C512QE120 FM27C512QE150 FM27C512NE55L FM27C512NE45L FM27C512V45L FM27C512VE55L FM27C512V55L
OCR Text	...0.10V. Note 5: TRI-STATE may be attained using OE or CE . Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between VCC...
Description	512K-Bit (64K x 8) High Performance CMOS EPROM 524,288-Bit (64K x 8) High Performance CMOS EPROM 524/288-Bit (64K x 8) High Performance CMOS EPROM Capacitors.. 100 PIECE MIN.. NC/NR
File Size	98.68K / 10 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD9000JD AD9000SD/883B AD9000-15
OCR Text	...e step input, 6-bit accuracy is attained in specified time. Recovers to 6-bit accuracy in specified time, after 150% full-scale input overvoltage. 10 Measured on Bit 1 (MSB) only. 11 Measured at 50 MSPS encode rate. 12 Analog input frequ...
Description	HIGH SPEED 6 BIT A/D CONVERTER High Speed 6-Bit A/D Converter
File Size	198.96K / 8 Page	View it Online	Download Datasheet

For attained Found Datasheets File :: 866 Search Time::1.578ms
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