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organisation Datasheet PDF File

For organisation Found Datasheets File :: 670 Search Time::0.922ms
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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	HYS72V4120GU-10 HYS64V4120GU HYS64V4120GU-10
OCR Text	...cations 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from ...
Description	3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module
File Size	71.97K / 11 Page	View it Online	Download Datasheet

				STMicro
Part No.	M29F400B M29F400T 5127
OCR Text	...d programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make ...
Description	4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory From old datasheet system
File Size	228.90K / 34 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-75 HYS64V16200GDL-8 HYS64V32220GDL HYS64V32220GDL-7 HYS64V32220GDL-75 HYS64V16200GDL-7.5-D HYS64V32220GDL-7.5-D HYS64V16200GDL-7-D HYS64V32220GDL-7-D HYS64V16200GDL-7.5 HYS64V32220GDL-8-C2 HYS64V16200GDL-8-C2
OCR Text	...4 (256 MByte) non-parity module organisation Performance: -7 PC133 2-2-2 fCK tAC Clock frequency (max.) Clock access time 133 5.4 -7.5 PC133 3-3-3 133 5.4 -8 PC100 2-2-2 100 6 Units MHz ns * * * * Single +3.3V( 0.3V ) power sup...
Description	144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM\|16MX64\|CMOS\|DIMM\|144PIN\|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
File Size	102.13K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYS64T64020LM-5-A HYS64T32000HM HYS64T32000HM-37-A HYS64T32000HM-5-A HYS64T32000KM HYS64T32000KM-37-A HYS64T32000KM-5-A HYS64T32000LM HYS64T32000LM-37-A HYS64T32000LM-5-A HYS64T64020HM HYS64T64020HM-37-A HYS64T64020HM-5-A HYS64T64020KM HYS64T64020KM-37-A HYS64T64020KM-5-A HYS64T64020LM HYS64T64020LM-37-A
OCR Text	...s. 32M x 64 and 64M x 64 module organisation and 32M x 16 chip organisation JEDEC standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V ( 0.1 V) power supply Built with 512Mb DDR2 SDRAMs in P-TFBGA-84-2 chipsize...
Description	Double-Data-Rate-Two SDRAM Micro-DIMM
File Size	579.12K / 31 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	M58LW064 M58LW064BZA M58LW064A M58LW064A150NF1T M58LW064A150NF6T M58LW064A150NH1T M58LW064A150NH6T M58LW064A150T1T M58LW064A150T6T M58LW064A150ZA1T M58LW064A150ZA6T M58LW064ANF M58LW064ANH M58LW064AT M58LW064AZA M58LW064B M58LW064B150NF1T M58LW064B150NF6T M58LW064B150NH1T M58LW064B150NH6T M58LW064B150T1T M58LW064B150T6T M58LW064B150ZA1T M58LW064B150ZA6T M58LW064BNF M58LW064BNH M58LW064BT
OCR Text	organisation, M58LW064B x16/x32 selectable MULTI-BIT CELL for HIGH DENSITY and LOW COST SUPPLY VOLTAGE - VDD = 2.7V to 3.6V Supply Voltage - VDDQ = 2.7V to 3.6V or 1.8V to 2.5V Input/Output Supply Voltage TSOP56 (NF) 1 86 s TSOP86 I...
Description	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
File Size	316.15K / 53 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HYM64V2005GU-50 Q67100-Q2183 Q67100-Q2180 Q67100-Q2181 Q67100-Q2182
OCR Text	...cations 1 bank 2M x 64, 2M x 72 organisation Optimized for byte-write non-parity or ECC applications Extended Data Out (EDO) Performance: -50 tRAC tCAC tAA tRC tHPC RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mo...
Description	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M x 72 Bit ECC DRAM Module unbuffered 2M x 64 Bit DRAM Module unbuffered 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
File Size	78.73K / 14 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	HYS72V2100GCU-10 HYS64V2100GCU-10 HYS72V2100GU-10 HYS64V2100GU-10 HYS64V2100G
OCR Text	...cations 1 bank 2M x 64, 2M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from ...
Description	3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
File Size	74.58K / 12 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
Part No.	M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-100F1TR M27V400-100F6TR M27V400-100XB1TR M27V400-100XB6TR M27V400-100XF1TR M27V400-100XF6TR
OCR Text	...s, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTEVPP pin. When BYTEVPP is at VIH the Word-wide organisation is selected and the Q15A-1 pin is used for Q15 Data Output. When the BYTEVPP pin is at V IL t...
Description	NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
File Size	116.00K / 14 Page	View it Online	Download Datasheet

For organisation Found Datasheets File :: 670 Search Time::0.922ms
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