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For pseudomorphic Found Datasheets File :: 276 Search Time::0.781ms
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				Filtronic Compound Semiconductors
Part No.	FMA3019QFN FMA3019QFN-EB
OCR Text	... The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small foot...
Description	HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE
File Size	96.77K / 4 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP750SOT89-2 LP750SOT89-1 LP750SOT89
OCR Text	...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasit...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT LOW NOISE HIGH LINEARITY PACKAGED PHEMT LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
File Size	43.41K / 3 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	CDQ0303-QS CDQ0303-QS-0G00 CDQ0303-QS-0G0T PB-CDQ0303-QS-00B0 PB-CDQ0303-QS-00A0
OCR Text	...ier Design AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600m Gate Wid...
Description	500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier
File Size	530.80K / 14 Page	View it Online	Download Datasheet

				Filtronic Compound Semicond... FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP1500P100
OCR Text	...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi...
Description	PACKAGED 1W POWER PHEMT KU BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
File Size	47.10K / 3 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPA6836V
OCR Text	...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an...
Description	MEDIUM POWER PHEMT WITH SOURCE VIAS
File Size	69.65K / 3 Page	View it Online	Download Datasheet

				http:// FILTRONIC[Filtronic Compound Semiconductors]
Part No.	EB-FPM2750QFN-BAL FPM2750QFN EB-FPM2750QFN-SE
OCR Text	...PM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small foot...
Description	LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
File Size	414.92K / 8 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	MB88161PVB-G-ERE1 MGA-71543-BLKG MGA-71543-TR1G MGA-71543-TR2G MGA-7154304 MGA-71543-TR2 MGA-71543-BLK MGA-71543-TR1
OCR Text	...Agilent's cost effective PHEMT (pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Mode...
Description	Low Noise Amplifier with Mitigated Bypass Switch
File Size	254.23K / 24 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE32100001 NE321000
OCR Text	pseudomorphic HJ FET FEATURES * SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11...
Description	ULTRA LOW NOISE pseudomorphic HJ FET
File Size	122.23K / 6 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP6836P100-3 LP6836P100-2 LP6836P100 LP6836P100-1
OCR Text	...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a...
Description	Packaged 0.25W Power PHEMT
File Size	22.31K / 2 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP6836P70
OCR Text	...a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 m x 360 m Schottky barrier gate, defined by electr...
Description	PACKAGED MEDIUM POWER PHEMT
File Size	58.53K / 3 Page	View it Online	Download Datasheet

For pseudomorphic Found Datasheets File :: 276 Search Time::0.781ms
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