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  puls Datasheet PDF File

For puls Found Datasheets File :: 3031    Search Time::1.14ms    
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    FZ1800R17HE4B9

Infineon Technologies AG
Part No. FZ1800R17HE4B9
OCR Text ...50c einschaltverlustenergiepropuls turn-onenergylossperpulse i c = 1800 a, v ce = 900 v, l s = 50 nh v ge = 15 v, di/dt = 11000 a/s (t vj = 150c) r gon = 0,68 w e on 390 510 560 mj mj mj t vj = 25c t vj = 125c t vj = 150...
Description front-end low noise amplifier for Global Navigation Satellite Systems (GNSS)

File Size 631.88K  /  9 Page

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Part No. FP35R12KS4CG
OCR Text ... ns einschaltverlustenergie pro puls i c = i nenn , v cc = 600 v turn-on energy loss per pulse v ge = 15v, t vj = 125c, r g = 22 ohm e on - 4,5 - mws l s = 50 nh...
Description 40 A, 1200 V, N-CHANNEL IGBT

File Size 213.48K  /  12 Page

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Part No. FF800R12KL4C
OCR Text ...- s einschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 1,8 ? , t vj = 125c, l s = 70nh e on - 120 - mws abschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-...
Description IGBT Module

File Size 87.43K  /  8 Page

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Part No. FF800R12KL4C
OCR Text ...- s einschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 1,8 ? , t vj = 125c, l s = 70nh e on - 120 - mws abschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-...
Description 1250 A, 1200 V, N-CHANNEL IGBT

File Size 135.78K  /  9 Page

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Part No. DBFF800R12KE320
OCR Text ...lse ausschaltverlustenergie pro puls - v ge =15v, r gon =3,3 , t vj = 125c fallzeit (induktive last) fall time (inductive load) i sc e off i c = 800a, v cc = 600v, l = 90nh v ge =15v, r goff =0,39 , t vj = 125c i c = 800a, v cc = 60...
Description IGBT Module

File Size 122.65K  /  8 Page

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    V23990-K222-A-T1-14

Vincotech
Part No. V23990-K222-A-T1-14
OCR Text ...mws einschaltverlustenergie pro puls tj=125c rgon= 4 ohm 0/15 300 30 0,71 turn-off energy loss per pulse e off tj=25c rgoff= 8 ohm mws abschaltverlustenergie pro puls tj=125c rgon= 4 ohm 15/0 300 30 0,9 input capacitance c ies tj=25c f=1mhz...
Description 2nd Gen. PIM Size 2, 600V / 30A

File Size 172.95K  /  14 Page

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    IFS75S12N3T4B11

Infineon Technologies AG
Part No. IFS75S12N3T4B11
OCR Text ...2 s einschaltverlustenergie pro puls i c = 75 a, v ce = 600 v t vj = 25c 4,87 mj turn-on energy loss per pulse v ge = 15 v, di c /dt = 2,4 ka/s (tvj =150c) t vj =125c e on 7,7 mj r goff = 2,2 w ...
Description High Power RF LDMOS FETs

File Size 460.99K  /  13 Page

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    IFS75B12N3T4B31

Infineon Technologies AG
Part No. IFS75B12N3T4B31
OCR Text ...50c einschaltverlustenergiepropuls turn-onenergylossperpulse i c = 75 a, v ce = 600 v, l s = 25 nh v ge = 15 v, di/dt = 2800 a/s (t vj =150c) r gon = 2,2 w e on 4,70 7,20 8,00 mj mj mj t vj = 25c t vj = 125c t vj = 150c a...
Description High Power RF LDMOS FETs

File Size 506.46K  /  8 Page

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