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  GT60-005 Datasheet PDF File

For GT60-005 Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    TOSHIBA
Part No. GT60PR21
Description IGBT for soft switching applications

File Size 220.19K  /  7 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. GT60PR21
Description IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    TOSHIBA
Part No. GT60J322
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications

File Size 171.57K  /  6 Page

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    TOSHIBA
Part No. GT60M301
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS

File Size 296.06K  /  6 Page

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    GT60N322

Toshiba Semiconductor
Part No. GT60N322
Description Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

File Size 161.78K  /  6 Page

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    TOSHIBA
Part No. GT60M302
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 278.94K  /  6 Page

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    GT60M303

Toshiba Semiconductor
Part No. GT60M303
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

File Size 415.88K  /  6 Page

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    ERICSSON[Ericsson]
Part No. PGT60107
Description 1620 nm Transmitter Module for Supervisory Channel Applications

File Size 122.83K  /  4 Page

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    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PGT60106
Description 1510 nm Transmitter Module for Supervisory Channel Applications

File Size 114.53K  /  4 Page

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    GT60M303-Q

Toshiba Semiconductor
Part No. GT60M303-Q
Description HIGH POWER SWITCHING APPLICATIONS

File Size 422.21K  /  6 Page

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    TOSHIBA
Part No. GT60M303
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 265.23K  /  6 Page

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For GT60-005 Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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