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  0.140-20a Datasheet PDF File

For 0.140-20a Found Datasheets File :: 3760    Search Time::2.375ms    
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    2SD1010

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ... NV. 5.10.2 s Features 0.45 -0.1 +0.2 0.45 -0.1 1.27 +0.2 V mA mA mW C C 123 2.30.2 V 2.540.15 1:Emitte...140 400 100 25C Ta=75C 80 -25C 2SD1010 IC -- VCE 120 VCE=10V IC -- VBE Collector power di...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

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    2SD1030

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1030
OCR Text 0.3 +0.2 s Features q q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 +0.2 1.1 -0.1 s Absolute Maximum Ratings Parameter Co...140 200 100 25C Ta=75C 80 -25C 2SD1030 IC -- VCE 120 VCE=10V IC -- VBE Collector power di...
Description Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text 0.2 2.8 -0.3 s Features q q q q 0.650.15 1.5 -0.05 +0.25 0.650.15 +0.2 1.1 -0.1 Parameter Collector to base voltage...140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector t...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

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    2SD1199

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1199
OCR Text 0 s Features q q q q q 1.5 R0.9 R0.9 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VC...140 400 100 25C 2SD1199 IC -- VCE 120 VCE=10V IC -- VBE Collector power dissipation PC (m...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.38K  /  2 Page

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    2SD601A 2SD0601 2SD0601A 2SB709A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD601A 2SD0601 2SD0601A 2SB709A
OCR Text 0.3 +0.2 Unit: mm s Features q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 High foward current transfer ratio hFE. Low collect...140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to e...
Description    Silicon NPN epitaxial planer type

File Size 37.72K  /  2 Page

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    2SD637 2SD0637

Panasonic Semiconductor
Part No. 2SD637 2SD0637
OCR Text 0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Pa...140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to e...
Description Silicon NPN epitaxial planer type small signal transistor

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    2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2SD958
OCR Text ...omplementary to 2SB788 6.90.1 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 1.5 R0.9 R0.9 0.85...140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (C) Co...
Description Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H Typ. --- 0.064 --- --- --- --- --...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H Typ. --- 0.064 --- --- --- --- --...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... VDSS = 40V G S RDS(on) = 0.009 ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical T...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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