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SIEMENS AG
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| Part No. |
HYS64V16220GDL
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| OCR Text |
...bank 16m x 64 non-parity module organisation ? performance: ? single +3.3v( 0.3v ) power supply ? programmable cas latency, burst length and wrap sequence (sequential & interleave) ? auto refresh (cbr) and self refresh ? decoupling cap... |
| Description |
3.3V SDRAM Modules(3.3V SDRAM 模块)
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| File Size |
93.01K /
13 Page |
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Download Datasheet
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意法半导
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| Part No. |
M29W800AB
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| OCR Text |
...d programmers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to mak... |
| Description |
8Mbit(1Mbx8 or 512Kbx16, Block Erase) Low Voltage Single Supply Flash Memory(8Mb闪速存储器)
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| File Size |
32.24K /
4 Page |
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it Online |
Download Datasheet |
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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HYM64V4045GU-50 Q67100-Q2187 HYM64V4005GU-50 HYM64V4005GU-60 HYM72V4005GU-50 HYM72V4005GU-60 Q67100-Q2184 Q67100-Q2185 Q67100-Q2186
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| OCR Text |
...M x 4 EDO DRAMs for the 4M x 64 organisation and eighteen 4M x 4 DRAMs for the 4M x 72 organisation, both in TSOPII packages. Decoupling capacitors are mounted on the PC board. The DIMMs use optional serial presence detects implemented via ... |
| Description |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
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| File Size |
94.87K /
17 Page |
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it Online |
Download Datasheet |
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意法半导
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| Part No. |
M28W160
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| OCR Text |
...the '1' state. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. each block can be programmed and erased over 100,000 cycles. v ddq allows to drive the i/o pin down to 1.65v. an o... |
| Description |
16Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory(16Mb低压闪速存储器)
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| File Size |
289.68K /
40 Page |
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it Online |
Download Datasheet |
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Price and Availability
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