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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710pBF
OCR Text	... VDSS = 100V RDS(on) = 23m g S ID = 57A Description Advanced HEXFET(R) power MOSFETs from International Rectifier utilize advanc...p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 28A, VgS = 0V --- 140 220 ns TJ = 25C, IF = 28A --...
Description	power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...tions MOSFET symbol showing the g integral reverse p-n junction diode. TJ = 25C, IS = 30A, V gS = 0V TJ = 125C, IS = 30A, VgS = 0V TJ = 25C, IF = 16A, VR=10V di/dt = 100A/s TJ = 125C, IF = 16A, VR=10V di/dt = 100A/s D S 2 www.ir...
Description	power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...lanche Voltage and Current S g 6 5 Top View SO-8 Absolute Maximum Ratings parameter VDS VgS ID @ TA = 25C ID @ TA = 70C IDM...p-n junction diode. TJ = 25C, IS = 16A, VgS = 0V TJ = 25C, IF = 16A, VDD = 10V di/dt = 100A/s e ...
Description	HEXFETpower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	... Avalanche Allowed up to Tjmax g VDSS = 55V RDS(on) = 3.3m Description Specifically designed for Automotive applications, this HEXFE...p-n junction diode. TJ = 25C, IS = 75A, VgS = 0V TJ = 25C, IF = 75A, VDD = 28V di/dt = 100A/s e ...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...its q q q q q q VDSS = 75V g S RDS(on) = 0.007 ID = 106AV Description Designed specifically for Automotive applications, this Ad...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 82A, VgS = 0VT --- 93 140 ns TJ = 25C, IF = 82A ---...
Description	75V Single N-Channel HEXFET power MOSFET in a D2-pak package 75V Single N-Channel HEXFET power MOSFET in a TO-262 package AUTOMOTIVE MOSFET power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808pBF
OCR Text	...its q q q q q q VDSS = 75V g S RDS(on) = 0.007 ID = 140AV Description Designed specifically for Automotive applications, this Ad...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 82A, VgS = 0VT --- 93 140 ns TJ = 25C, IF = 82A ---...
Description	75V Single N-Channel HEXFET power MOSFET in a TO-220AB package power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	... VDSS = -55V RDS(on) = 0.02 g ID = -74A S Fifth generation HEXFETs from International Rectifier utilize advanced processing techn...p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, VgS = 0V --- 89 130 ns TJ = 25C, IF = -38...
Description	power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single p-Channel HEXFET power MOSFET in a D2-pak package -55V Single p-Channel HEXFET power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905pBF
OCR Text	...ption l l D VDSS = -55V g S RDS(on) = 0.02 ID = -74A Fifth generation HEXFETs from International Rectifier utilize advanced pr...p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, V gS = 0V --- 89 130 ns TJ = 25C, IF = -3...
Description	power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single p-Channel HEXFET power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... VDSS = -55V RDS(on) = 0.06 g ID = -31A S Fifth generation HEXFETs from International Rectifier utilize advanced processing techn...p ak T O -26 2 Absolute Maximum Ratings parameter ID @ TC = 25C ID @ TC = 100C IDM pD @TA = ...
Description	power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... VDSS = -55V RDS(on) = 0.06 g ID = -31A S Description Fifth generation HEXFETs from International Rectifier utilize advanced pro...p-n junction diode. S TJ = 25C, IS = -16A, VgS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Notes: ...
Description	power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

For g p Found Datasheets File :: 173141 Search Time::1.312ms
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