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  puls Datasheet PDF File

For puls Found Datasheets File :: 3973    Search Time::1.234ms    
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    IPD06N03L

INFINEON[Infineon Technologies AG]
Part No. IPD06N03L
OCR Text ...sed drain current TC=25C ID puls 200 Avalanche energy, single pulse 1) ID=20A, V DD=25V, RGS=25 EAS 250 mJ Repetitive avalanche energy, limited by T jmax2) Reverse diode dv/dt IS=50A, VDS=24V, di/dt=200A/s, Tjmax=175...
Description OptiMOS Buck converter series
OptiMOS Buck converter series
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 5.9mOhm, 50A, LL

File Size 157.77K  /  8 Page

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    IPD07N03L IPU07N03L

INFINEON[Infineon Technologies AG]
Part No. IPD07N03L IPU07N03L
OCR Text ...sed drain current TC=25C ID puls 120 Avalanche energy, single pulse ID=20A, V DD=25V, RGS=25 EAS 30 mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/s, Tjmax=175C ...
Description OptiMOS Power MOSFET, 30V, TO251, RDSon = 6.8mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.8mOhm, 30A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series 的OptiMOS降压转换器系

File Size 156.88K  /  8 Page

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    SPB08P06P SPP08P06P SPB08P06PSMD

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPB08P06P SPP08P06P SPB08P06PSMD
OCR Text ...0 C pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/s mJ T C = 25 C Avalanche energy, single pulse I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S =...
Description SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30

File Size 96.10K  /  9 Page

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    SPD08N10 SPU08N10

INFINEON[Infineon Technologies AG]
Part No. SPD08N10 SPU08N10
OCR Text ...VGS = f (QGate ) parameter: ID puls = 8.4 A SPD08N10 16 mJ V 12 25 VGS EAS 10 0,2 VDS max 8 0,8 VDS max 20 15 6 10 4 5 2 0 20 40 60 80 100 120 C 160 0 0 2 4 6 8 10 ...
Description SIPMOS Power Transistor

File Size 120.56K  /  8 Page

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    SPD08P06P SPU08P06P

INFINEON[Infineon Technologies AG]
Part No. SPD08P06P SPU08P06P
OCR Text ...0 C pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/s mJ T C = 25 C Avalanche energy, single pulse I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S =...
Description Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30

File Size 113.11K  /  9 Page

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    BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS16-02W BAS16 BAS16W BAS16S BAS16-03W BAS16-02V

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS16-02W BAS16 BAS16W BAS16S BAS16-03W BAS16-02V
OCR Text ... 150 TS TS Permissible puls Load R thJS = (tp) BAS16 10 3 K/W Permissible pulse Load IFmax / I FDC = (t p) BAS16 10 2 10 2 IFmax/IFDC 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0...
Description General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管

File Size 514.74K  /  10 Page

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    BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT15-099R BAT15-03W BAT15-099

INFINEON[Infineon Technologies AG]
Part No. BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT15-099R BAT15-03W BAT15-099
OCR Text ... BAT15-02L Permissible puls Load RthJS = (tp ) Permissible pulse Load IFmax / IFDC = (tp ) -5 10 -4 (TS ) Forward current IF = (TS ) TS D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -3 10 ...
Description Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
RESISTOR,SMD1206,1K,1/4W,5%
Silicon Schottky Diodes 硅肖特基二极

File Size 525.60K  /  10 Page

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    BAT64-02V BAT64-02W BAT64-05 BAT64 BAT64-07 BAT64-04 BAT64-04W BAT64-05W BAT64-06 BAT64-06W

INFINEON[Infineon Technologies AG]
Part No. BAT64-02V BAT64-02W BAT64-05 BAT64 BAT64-07 BAT64-04 BAT64-04W BAT64-05W BAT64-06 BAT64-06W
OCR Text ...) BAT64-05W 300 Permissible puls Load R thJS = (tp) BAT64-02V, BAT64-02W 10 3 K/W mA 10 2 200 RthJS IF 150 10 1 100 10 0 50 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 0 0 15 30 45 60 75 90 105 1...
Description Schottky Diodes - Silicon AF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes

File Size 489.25K  /  7 Page

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    BAV70L3 BAV70F BAV70U BAV70 BAV70W BAV70S BAV70T

INFINEON[Infineon Technologies AG]
Part No. BAV70L3 BAV70F BAV70U BAV70 BAV70W BAV70S BAV70T
OCR Text ...0-2004 BAV70... Permissible puls Load RthJS = (tp) BAV70 10 3 Permissible pulse Load IFmax / I FDC = (t p) BAV70 10 2 10 2 10 1 I Fmax/IFDC - 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 D=0 0.005 0.0...
Description Silicon Switching Diode

File Size 476.51K  /  7 Page

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    BCR169F BCR169L3 BCR169T BCR169 BCR169W SEMB3 BCR169S BCR169U

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BCR169F BCR169L3 BCR169T BCR169 BCR169W SEMB3 BCR169S BCR169U
OCR Text ... 0 tp tp Permissible puls Load RthJS = (tp) BCR169F 10 2 Permissible pulse Load Ptotmax/P totDC = (tp) BCR169F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 Ptotmax /PtotDC K/W RthJS 10 2 10 1...
Description PNP Silicon Digital Transistor 进步党硅数字晶体

File Size 494.03K  /  10 Page

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For puls Found Datasheets File :: 3973    Search Time::1.234ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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