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41256 AHC1G 44779 SAA7108E E1117 01900 SQ173N41 1M0565R
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  14m Datasheet PDF File

For 14m Found Datasheets File :: 396    Search Time::0.937ms    
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    CET[Chino-Excel Technology]
Part No. CEU71A3 CED71A3
OCR Text ... RDS(ON)=10m @VGS=10V. RDS(ON)=14m @VGS=5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-252 & TO-251 package. D 6 G D G S G D S CEU SERIES TO-252AA(D-PAK) CED S...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 53.84K  /  5 Page

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    API[API Delevan]
Part No. CMT4545-36M CMT4545 CMT4545-00M CMT4545-02M CMT4545-04M CMT4545-06M CMT4545-08M CMT4545-10M CMT4545-12M CMT4545-14m CMT4545-16M CMT4545-18M CMT4545-20M CMT4545-22M CMT4545-24M CMT4545-26M CMT4545-28M CMT4545-30M CMT4545-32M CMT4545-34M
OCR Text ...CMT4545-10M CMT4545-12M CMT4545-14m CMT4545-16M CMT4545-18M CMT4545-20M CMT4545-22M CMT4545-24M CMT4545-26M CMT4545-28M CMT4545-30M CMT4545-32M CMT4545-34M CMT4545-36M 0.49 0.87 1.50 2.00 5.60 8.20 10 15 22 27 33 50 68 75 100 150 200 250 30...
Description Surface Mount Toroids

File Size 36.37K  /  1 Page

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    AO4806L AO4806

Alpha & Omega Semiconductors
Part No. AO4806L AO4806
OCR Text ...ID = 9.4A (VGS = 10V) RDS(ON) < 14m (VGS = 10V) RDS(ON) < 15m (VGS = 4.5V) RDS(ON) < 21m (VGS = 2.5V) RDS(ON) < 30m (VGS = 1.8V) ESD Rating: 2000V HBM D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise not...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 110.75K  /  4 Page

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    Powerex, Inc.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS70UMH-03
OCR Text .................................. 14m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 70ns q q GATE w DRAIN e SOURCE r DRAIN e TO-22...
Description HIGH-SPEED SWITCHING USE 高速开关使

File Size 39.80K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS70UMH-03
OCR Text .................................. 14m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 70ns q q GATE w DRAIN e SOURCE r DRAIN e TO-22...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 44.85K  /  4 Page

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    FDD8778 FDU8778-F071 FDU8778

FAIRCHILD[Fairchild Semiconductor]
Part No. FDD8778 FDU8778-F071 FDU8778
OCR Text 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V Low gate resistance RoHS compliant LE A REE I DF tm This N-C...
Description N-CHANNEL POWERTRENCH MOSFET 25V, 35A, 14mOHM

File Size 344.11K  /  6 Page

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    PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
PerkinElmer Inc.
PerkinElmer, Inc.
Part No. RL1024PAQ-712 RL1024PAG-712 RL0512PAQ-712 RL0512PAG-712 RL1024P RL2048P RL2048PAG-712 RL2048PAQ-712 RL0512P
OCR Text 14m, single output, 512, 1024, 2048 elements Description In the P-series linear imagers, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompr...
Description P-SERIES LINEAR PHOTODIODE ARRAY IMAGERS P系列线性二极管阵列探测

File Size 170.59K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFZ48N IRFZ48NPBF
OCR Text ...ed D VDSS = 55V RDS(on) = 14m G S ID = 64A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 100.17K  /  8 Page

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    IRF[International Rectifier]
Part No. IRLU3715PBF IRLR3715PBF
OCR Text ... l VDSS 20V RDS(on) max 14m ID 54A D-Pak IRLR3715 I-Pak IRLU3715 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C TJ , TSTG Parameter Drain-Source Voltage Gate-to-...
Description SMPS MOSFET

File Size 265.53K  /  10 Page

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    KEC[KEC(Korea Electronics)]
Part No. KMB060N60PA
OCR Text ...-Source ON Resistance : RDS(ON)=14m (Max.) @VGS = 10V D I K M L P F G H J H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 +...
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 477.92K  /  6 Page

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For 14m Found Datasheets File :: 396    Search Time::0.937ms    
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