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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP750P100
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| OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate r... |
| Description |
PACKAGED 0.5 WATT POWER PHEMT
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| File Size |
48.29K /
3 Page |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP750
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| OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 750 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an... |
| Description |
0.5 W POWER PHEMT
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| File Size |
33.95K /
2 Page |
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it Online |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LPD200MX
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| OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-... |
| Description |
HIGH PERFORMANCE PHEMT
PACKAGED HIGH DYNAMIC RANGE PHEMT
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| File Size |
68.01K /
2 Page |
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it Online |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LPD200
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| OCR Text |
...llium Arsenide ( AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an... |
| Description |
HIGH PERFORMANCE PHEMT
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| File Size |
29.95K /
2 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LPV1500
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| OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source ... |
| Description |
PACKAGED LOW NOISE PHEMT
1 W Power PHEMT
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| File Size |
32.75K /
2 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5560L LX5560
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| OCR Text |
...with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure(NF) of 1.7dB while maintaining input third order intercept point(IIP3) of up to +6dBm.
The... |
| Description |
InGaAs - E-Mode pHEMT Low Noise Amplifier
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| File Size |
170.18K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5561LL LX5561
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| OCR Text |
...with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure of 1.5dB while maintaining input third order intercept point(IIP3) of up to +6.5dBm.
The L... |
| Description |
InGaAs - E-Mode pHEMT Low Noise Amplifier
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| File Size |
177.69K /
8 Page |
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it Online |
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
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| Part No. |
MGA71543 MGA-71543-TR1 MGA-71543-TR2 MGA-71543-BLK
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| OCR Text |
...Agilent's cost effective PHEMT (pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. * Bypass switch on chip Loss = -5.6 dB (Id < 5 A) IIP3 = +35 dBm * Adjustable input IP3: 0 to +9 ... |
| Description |
Low Noise Amplifier with Mitigated Bypass Switch
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| File Size |
286.21K /
25 Page |
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it Online |
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
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| Part No. |
ATF-38143- ATF38143 ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
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| OCR Text |
pseudomorphic HEMT in a Surface Mount Plastic Package
Technical Data
ATF-38143
Features
* Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape... |
| Description |
DC-DC Converter, 15Watt, Input VDC: 18~75, Output VDC: 12, Max Output Current(A): 1.25, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40C
Low Noise pseudomorphic HEMT in a Surface Mount Plastic Package
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| File Size |
152.59K /
14 Page |
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it Online |
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Price and Availability
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