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    M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28W320CB100N6T M28W320CB100N1T M28W320CT100GB1T M28W320CT85N6T M28W320CB

意法半导
STMicroelectronics
Part No. M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28W320CB100N6T M28W320CB100N1T M28W320CT100GB1T M28W320CT85N6T M28W320CB85GB1T M28W320CB85GB6T M28W320CB100ZB6T M28W320CB70N6T M28W320CB70ZB6T M28W320CB85N6T M28W320CB85ZB1T M28W320CB70ZB1T
OCR Text ...n the 1 state. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. all blocks are protected against pro- gramming and erase at power up. blocks can be unprotected to make changes in ...
Description    32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V

File Size 282.43K  /  42 Page

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    Infineon
Part No. HYS72V2200GCU-10 HYS64V2200GCU-10 HYS72V4220GCU-10 HYS64V4220GCU-10
OCR Text ... 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL' Rev. 1.0 module specification s Performance: -10 fCK t...
Description 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module
3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

File Size 77.45K  /  13 Page

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    意法半导
STMicroelectronics N.V.
Part No. M29W008B-100N5TR M29W008B-100N6TR M29W008B-100N1TR M29W008T-90N5TR M29W008T-100N5TR M29W008T-150N5TR M29W008T-120N5TR M29W008B-120N6TR M29W008B-90N6TR M29W008B-150N5TR M29W008B-120N5TR M29W008B-90N5TR M29W008T-150N6TR M29W008T-100N6TR M29W008T-120N1TR M29W008T-90N1TR M29W008B-150N1TR STMICROELECTRONICS-M29W008B-90N6TR STMICROELECTRONICS-M29W008T-120N6TR STMICROELECTRONICS-M29W008T-150N1TR
OCR Text ... programmers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to mak...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:6; Connector Shell Size:17; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:6; Connector Shell Size:17; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC -55 to 125
TV 11C 11#12 PIN RECP 8兆8,启动块低压单电源闪
TV 18C 14#22D 4#(TWINAX) SKT 8兆8,启动块低压单电源闪
Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC 8兆8,启动块低压单电源闪
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC 8兆8,启动块低压单电源闪
TV 22C 22#22D PIN RECP 8兆8,启动块低压单电源闪
Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP 8兆8,启动块低压单电源闪
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC 81兆8,启动块低压单电源闪
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:66; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight 8兆8,启动块低压单电源闪

File Size 223.34K  /  30 Page

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    意法半导
Part No. M29F105B
OCR Text ...d programmers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment and in the application.they can als...
Description 1Mbit (64Kb x16, Block Erase) Single Supply Flash Memory(1Mb闪速存储器)

File Size 204.73K  /  28 Page

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    Infineon
Part No. PSB2155-HV1.3
OCR Text ... . . . . . . . . 18 3.2 memory organisation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.2.1 program memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21...
Description SIUC-BA (Low-cost Single Chip ISDN US...

File Size 3,577.38K  /  380 Page

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    M29F002

STMicroelectronics
Part No. M29F002
OCR Text ...d programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make ...
Description 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

File Size 174.95K  /  29 Page

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    Infineon
Part No. HYS64T128021HDL-3.7-A HYS64T32000HDL-3.7-A HYS64T64020HDL-3.7-A HYS64T64020HDL-5-A HYS64T32000HDL-5-A HYS64T128021HDL-5-A
OCR Text ...M x 64 (512MB), 128M x 64 (1GB) organisation and density, intended for mounting into 200 pin connector sockets. Table 2 Ordering Informationfor RoHS Compliant Products Compliance Code2) Description SDRAM Technology 512 Mbit (x16) 512 ...
Description 256MB - 2GB, 200pin

File Size 652.60K  /  39 Page

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    M28W160B-GBT M28W160BB

STMicroelectronics
Part No. M28W160B-GBT M28W160BB
OCR Text ...the `1' state. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Each block can be programmed and erased over 100,000 cycles. V DDQ allows to drive the I/O pin down to 1.65V. An op...
Description 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory

File Size 199.14K  /  39 Page

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    4D Systems
Part No. UOLED-160-GMD1
OCR Text ...it Diagram 65,536 Colour Bitmap organisation 256 Colour Bitmap organisation Power-Up Reset 4. Appendix 4.1 4.2 4.3 4.4 4.5 Available models Related Products Auto Demo/Slide Show Precautions Help and Other Information www.4dsystems...
Description User Manual

File Size 1,219.87K  /  68 Page

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    EMMICRO[EM Microelectronic - MARIN SA]
Part No. EM4056B6WW11E EM4056B6WP11 EM4056 EM4056B6CB2RC EM4056B6CI2LC
OCR Text ...tion rate in the reader. Memory organisation Address Bit 17 0000000 0000010 Read Prot Write Prot Bit 0 is defined as the first bit output 1 LASER ROM (3 * 18) Bit 0 EEPROM (123 * 18) 1111110 1111111 Configuration Word PIN Word Conf...
Description 2KBIT Read/Write with ANTICOLLISION Contactless Identification Device

File Size 142.14K  /  14 Page

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