0.140-20a pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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0.140-20a Datasheet PDF File

For 0.140-20a Found Datasheets File :: 3526 Search Time::1.25ms
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				IRF[International Rectifier]
Part No.	IRLI3303
OCR Text	0.026 ID = 25A HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KV...140 31 0.21 20 130 20 5.6 2.6 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm) Units A W W/...
Description	HEXFET Power MOSFET HEXFET? Power MOSFET
File Size	153.46K / 8 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	CHA3512-99F_00 CHA351208 CHA3512-99F/00
OCR Text	...ufactured with a pHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. 0dB sta...140.3 -2.8 -157.7 3.5 -25.6 167.5 15.6 -54.8 -87.8 39.6 -4.7 -175.7 4.0 -28.0 -112.8 16.3 -91.9 -73....
Description	6-18GHz Low Noise Digital Variable Amplifier
File Size	448.70K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	CPV364M4U
OCR Text	...ly Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19 Description The IGBT technology is the key to International...140 VGE = 15V, RG = 10 160 Energy losses include "tail" and --- diode reverse recovery. --- mJ See F...
Description	IGBT SIP MODULE
File Size	262.14K / 10 Page	View it Online	Download Datasheet

				Nell Semiconductor Co., Ltd
Part No.	N-40EPU06 N-40APU06
OCR Text	0 e p u 0 6 s e r i e s r o h s r o h s ultraf ast soft reco ver y diode, 4 0 a fe atures ultrafast recovery 175 c ope...140 120 100 80 60 40 20 0 see note (1) dc square wave (d = 0.5) rated v applied r f i g . 5 m a ...
Description	FRED Ultrafast Soft Recovery Diode, 40 A
File Size	1,915.84K / 6 Page	View it Online	Download Datasheet

				Mean Well Enterprises Co., Ltd.
Part No.	Q-250 Q-250B Q-250C
OCR Text	...a 7a 1a 1a 20a 5a 1a 1a 2 ~ 20a 0.5 ~ 7a 0.5 ~ 1a 0 ~ 1a 2 ~ 20a 0.5 ~ 5a 0.5 ~ 1a 0 ~ 1a 201w 195w 80mvp-p 120mvp-p 120mvp-p 50mvp-p 80mvp-...14086mm (lw*h) 1.4kg; 8pcs/11.5kg/0.97cuft 1. all parameters not specially mentioned are measured ...
Description	250W Quad Output Power Supply
File Size	805.52K / 3 Page	View it Online	Download Datasheet

				Altech corporation
Part No.	ABH103U20A ABL103U20A ABS103U20A ABH203U200A ABL203U200A ABS203U200A ABH203U225A ABL203U225A ABS203U225A ABS403U250A ABL403U250A ABL403U300A ABL403U350A ABL403U400A ABL203U175A ABH203U175A ABS203U175A ABH603U500A ABH603U600A ABL603U500A ABH403U250A ABH403U300A ABH403U350A ABH403U400A ABL103U100A ABH103U100A ABS103U100A ABS603U500A ABS603U600A ABS403U300A ABS403U350A ABS403U400A ABH103U30A ABL103U30A ABS103U30A ABS203U125A ABS203U150A ABS103U15A ABS103U40A ABS103U50A ABS103U60A ABH103U50A ABL103U50A ABH103U15A ABH103U60A ABH203U125A ABH103U40A ABH103U80A ABH203U150A ABS103U80A ABL603U600A ABL103U60A
OCR Text	...3U -603U AWG; kcmil 14-8 6-1/0 1 1/0-2/0 3/0-4/0 250-300 250-400 500 3/0 250-400 500 No. of Connectors 1 1 1 1 1 1 1 1 2 2 2 Torque...140 (5.51 in.) 110 (4.33 in.) 210 (8.27 in.) 110 (4.33 in.) MAGNETIC TRIP SETTINGS ABS/ABH/ABL ...
Description	Molded Case Circuit Breakers UL489 Listed
File Size	925.05K / 10 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	CHA3512
OCR Text	...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...140.3 -2.8 -157.7 3.5 -25.6 167.5 15.6 -54.8 -87.8 39.6 -4.7 -175.7 4.0 -28.0 -112.8 16.3 -91.9 -73....
Description	6-18GHz Low Noise Digital Variable Amplifier
File Size	515.82K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRFP460N IRFP460NPBF
OCR Text	...0 57 Single D FEATURES 500 0.24 * Low Gate Charge Qg Results in Simple Drive Available Requirement * Improved Gate, Avalanche and Dy...140 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS complia...
Description	Power MOSFET
File Size	158.88K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC40WPBF
OCR Text	...20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter R...140 35 Max. Units Conditions 147 IC =20A 18 nC VCC = 400V See Fig.8 54 VGE = 15V TJ = 25C ns 150 I...
Description	ISSULATED GATE BIPOLAR TRANSISTOR
File Size	201.68K / 9 Page	View it Online	Download Datasheet

				IXYS, Corp.
Part No.	IXGK50N60C2D1
OCR Text	...) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 650 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge ...140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g e - volts i c - amperes t j = 125oc ...
Description	HiPerFAST IGBT with Diode 75 A, 600 V, N-CHANNEL IGBT, TO-264AA
File Size	624.54K / 6 Page	View it Online	Download Datasheet

For 0.140-20a Found Datasheets File :: 3526 Search Time::1.25ms
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