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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD6836
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OCR Text |
...The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 360 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure mi... |
Description |
0.25W POWER PHEMT
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File Size |
185.61K /
2 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD750P100
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OCR Text |
...100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 750 m Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure min... |
Description |
0.5W PACKAGED POWER PHEMT
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File Size |
179.87K /
3 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPDA200V
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an... |
Description |
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
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File Size |
57.15K /
3 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP1500SOT89
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi... |
Description |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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File Size |
43.63K /
3 Page |
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it Online |
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Filtronic Compound Semicond... FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP1500
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a... |
Description |
1W POWER PHEMT
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File Size |
39.07K /
2 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP3000P100
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi... |
Description |
PACKAGED 2W POWER PHEMT
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File Size |
46.54K /
3 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP3000
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 3000 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a... |
Description |
2 W POWER PHEMT
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File Size |
43.72K /
2 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP6872P100-3 LP6872P100 LP6872P100-1 LP6872P100-2
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 720 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a... |
Description |
Packaged 0.5W Power PHEMT
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File Size |
22.33K /
2 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LP6872
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OCR Text |
...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 720 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an... |
Description |
0.5W POWER PHEMT
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File Size |
37.34K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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