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Infineon
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| Part No. |
SDA9188-3X SDA91883
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| OCR Text |
...ity of 169.812 bits. The memory organisation is 89 x 212 x 9 bits. Data are written in with the inset and read out with the parent clock frequency. For standard video signals with 50 or 60 Hz a full frame display is possible. To assure a co... |
| Description |
Picture-in-Picture Processor with On-Chip PLL
From old datasheet system
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| File Size |
630.08K /
31 Page |
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STMicro
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| Part No. |
M28W800T 6658
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| OCR Text |
...the '1' state. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Each block can be programmed and erased over 100,000 cycles. V DDQ allows to drive the I/O pin down to 1.65V. An op... |
| Description |
8 Mbit (512Kb x16, Boot Block) Low Voltage Flash Memory
From old datasheet system
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| File Size |
282.37K /
40 Page |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
HYS72V8000GU-10 HYS64V8000GU-10 HS648000 HYS64V8000GU
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| OCR Text |
...cations 1 bank 8M x 64, 8M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance:
-10 fCK tAC Max. Clock frequency Max. access time from ... |
| Description |
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module 8M X 72 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168
From old datasheet system
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| File Size |
67.96K /
11 Page |
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STMicro
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| Part No. |
ST1200 5002
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| OCR Text |
organisation 96 bits Protected in Write Mode By Lock-Out Fuse 5 V Power Supply (VCC) and 21 V Programming Voltage (VPP) 85 mW in Read Mode Power On Reset
1 1 1 1
s
s s s s
Very High Reliability Level Standard Delivery: Wafer Form ... |
| Description |
Memory Card IC 256 bit OTP EPROM with Lock-Out
From old datasheet system
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| File Size |
26.22K /
2 Page |
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Numonyx Asia Pacific Pte, Ltd.
STMicroelectronics N.V.
ST Microelectronics
意法半导
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| Part No. |
GS-F8MB-SIMM 4962
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| OCR Text |
...ndardized SIMM printed circuit. organisation Figure 1 shows the block diagram. The FLASH module is organized as 16 x 512K x 8 bits with address lines A0-A18 and Data Inputs/Outputs DQ0 to 7, DQ8 to 15, DQ16 to 23 and DQ24 to 31.
January ... |
| Description |
8MByte SIMM Flash Memory Module(8M字节SIMM闪速存储器模块) 8MByte上海药物研究所闪存模块（上海药物研究所800万字节闪速存储器模块
8M X 8 FLASH 5V PROM MODULE, 70 ns, SMA80 SIMM-80
From old datasheet system
8 MByte SIMM FLASH MEMORY MODULE
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| File Size |
46.49K /
4 Page |
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Zarlink Semiconductor
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| Part No. |
CLA70000
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| OCR Text |
...fers
Figure 3 - Power Supply organisation
Process Technology
* Advanced 1 micron twin well process with epitaxial substrate Class 10 six inch wafer fabrication facility High density low power process
* *
The CLA70000 arrays are... |
| Description |
High Density CMOS Gate Arrays
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| File Size |
189.15K /
17 Page |
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