ms-026 pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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ms-026 Datasheet PDF File

For ms-026 Found Datasheets File :: 2980 Search Time::1.203ms
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				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	BAR46AFILM BAR46FIL BAR46 BAR46FILM
OCR Text	...t : * tp = 380s < 2% ** tp = 5 ms, < 2% Test conditions IR = 100 A IF = 0.1 mA IF = 10 mA IF = 250 mA VR = 1.5 V VR = 10 V VR = 50 V VR...026 e B e1 D A A1 B S A1 c D e e1 E H L S L H c 0.6 typ. 0.024 typ. FO...
Description	16KX9 35NS FIFO PLCC PLCC32 SMALL SIGNAL SCHOTTKY DIODES SMALL SIGNAL SCHOTTKY DIODES
File Size	494.42K / 5 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BAR46 BAR46A 2935
OCR Text	...t : * tp = 380s < 2% ** tp = 5 ms, < 2% Test conditions IR = 100 A IF = 0.1 mA IF = 10 mA IF = 250 mA VR = 1.5 V VR = 10 V VR = 50 V VR...026 e B e1 D A A1 B S A1 c D e e1 E H L S L H c 0.6 typ. 0.024 typ. FO...
Description	SMALL SIGNAL SCHOTTKY DIODES From old datasheet system
File Size	48.23K / 5 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	D2003 D2003UK
OCR Text	...e Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal...026 0.024 0.022 0.020 0.020 0.020 0.022 0.025 0.028 0.032 0.036 0.044 0.053 ang 67.2 58.1 45.5 34...
Description	METAL GATE RF SILICON FET
File Size	59.49K / 4 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS2012SF DS2012SF55 DS2012SF56 DS2012SF57 DS2012SF58 DS2012SF59 DS2012SF60
OCR Text	... 0.038 0.040 0.042 0.043 0 1 ms 10 1 23 5 10 20 0.50 50 d.c. Halfwave 3 phase 120 6 phase 60 0.001 0.001 0.01 Cycles at 50Hz Duration 0.1 Time - (s) 1.0 10 Fig.6 Surge (non-repetitive) forward...
Description	Rectifier Diode
File Size	92.00K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7488 IRF7488TR
OCR Text	...NE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION...
Description	80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	138.79K / 9 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	MJF3055 MJF2955 ON2047
OCR Text	... Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Measurement made with thermocouple contacting the bottom insulated surface (in a locatio...026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.13...
Description	COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
File Size	156.31K / 4 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62703-F108 Q62703-F106 CFY25 Q62703-F107 CFY25-17 CFY25-20 CFY25-23
OCR Text	...60 - 3.0 2 - mA V A Unit mS dB Semiconductor Group 2 CFY 25 Total power dissipation Ptot = f (TS; TA) Package mounted ...026 0.049 0.069 0.083 0.093 0.100 0.105 0.107 0.108 0.109 0.110 0.110 0.110 0.112 0.115 0.119 0.125 ...
Description	From old datasheet system GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
File Size	133.30K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. INTERSIL[Intersil Corporation]
Part No.	RFT3055 RFT3055LE HGTG20N120CND FN4537
OCR Text	....1 1 10 tAV, TIME IN AVALANCHE (ms) 100 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERIS...
Description	2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET From old datasheet system
File Size	95.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	BD179 BD179-10 BD190 ON0189
OCR Text	...OLTAGE (VOLTS) 70 100 100 s 1.0 ms 5.0 ms The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter s...026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 ...
Description	From old datasheet system CASE 77-09 TO-225AA TYPE Plastic Medium Power Silicon NPNP Transistor
File Size	106.88K / 4 Page	View it Online	Download Datasheet

				Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
Part No.	BD438 ON0195 BD442 BD440
OCR Text	...T TC = 25C BONDING WIRE LIMIT 5 ms 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V CURVES APPLY BELOW RATED VCEO BD438 BD440 BD4...026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 ...
Description	RH Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 1W; Safety standards and approval: EN POWER TRANSISTORS PNP SILICON From old datasheet system 4.0 AMPERES POWER TRANSISTORS Plastic Medium Power Silicon PNP Transistor
File Size	111.30K / 4 Page	View it Online	Download Datasheet

For ms-026 Found Datasheets File :: 2980 Search Time::1.203ms
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