| PART |
Description |
Maker |
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8640V18T-200 GS8640V18T-167I GS8640V18T-300 GS86 |
72Mb Burst SRAMs
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| GS86422V72 GS8642V36 GS8642V18 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864418 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8644V36E-250 GS8644V18E-133I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|
| GS864018T-XXXV |
(GS8640xxGT-xxxV) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C |
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
|
GSI Technology
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
