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| Ordering number : ENN7685 2SJ657 P-Channl Silicon MOSFET 2SJ657 General-Purpose Switching Device Features * * * * Package Dimensions unit : mm 2063A [2SJ657] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 123 2.55 2.4 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings --100 20 --25 --100 2.0 35 150 --55 to +150 Unit V V A A W W C C 2.55 2.55 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-13A Ratings min --100 --1 10 -1.2 21 30 --2.6 typ max Unit V A A V S Marking : J657 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41504QA TS IM TA-100800 No.7685-1/4 2SJ657 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain"Miller"Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--13A, VGS=-10V ID=--13A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=--25A VDS=--50V, VGS=--10V, ID=-25A VDS=--50V, VGS=-10V, ID=--25A IS=--25A, VGS=0 Ratings min typ 39 49 6350 430 250 47 240 520 200 110 20 20 --0.94 --1.2 max 52 69 Unit m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN ID= --13A RL=3.85 VDD= --50V D PW=10s D.C.1% VOUT G 2SJ657 P.G 50 S --50 ID -- VDS Tc=25C --1 0V --6 V --50 ID -- VGS 25C --4V --40 --40 Drain Current, ID -- A Drain Current, ID -- A --30 --30 --20 --20 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Tc= --25 --10 --10 75 C 25C VGS= --3V C Tc= ---3.5 --4.0 75C --4.5 --5.0 IT06588 Drain-to-Source Voltage, VDS -- V IT06587 Gate-to-Source Voltage, VGS -- V 25 VDS= --10V C No.7685-2/4 2SJ657 120 RDS(on) -- VGS ID= --13A 90 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 100 Static Drain-to-Source On-State Resistance, RDS(on) -- m 80 70 60 50 40 30 20 10 0 --50 80 60 Tc=75C 40 --1 I D= A --13 I D= VG 3A, --4V S= 10V = -VGS , 25C --25C 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID IT06589 --100 7 5 3 2 Case Temperature, Tc -- C IT06590 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V Forward Drain Current, IF -- A 25 C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 7 5 3 2 1.0 --0.1 75 25C = Tc 5 --2 C C --0.01 7 5 3 2 --0.001 0 --0.3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 57 IT06591 10000 7 5 Tc= 7 --0.6 --25C --0.9 5C --1.2 --1.5 IT06592 Drain Current, ID -- A 1000 7 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS Ciss f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD= --50V VGS= --10V Ciss, Coss, Crss -- pF 3 2 tf 100 7 5 3 2 10 --0.1 tr 1000 7 5 3 2 100 td(on) Coss Crss 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 --5 --10 --15 --20 --25 --30 IT06594 Drain Current, ID -- A --10 --9 IT06593 3 2 --100 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --50V ID= --25A Drain Current, ID -- A IDP= --100A --8 --7 --6 --5 --4 --3 --2 --1 0 0 10 20 30 40 50 60 70 80 90 100 110 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ID= --25A <10s 10 s 10 0 s 1m 10 s 10 ms 0m s Operation in this area is limited by RDS(on). DC op era tio n --0.1 --0.1 Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC IT06595 Drain-to-Source Voltage, VDS -- V 5 7--100 2 IT06596 No.7685-3/4 2SJ657 2.5 PD -- Ta Allowable Power Dissipation, PD -- W 45 40 35 30 25 20 15 10 5 0 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT06597 Case Temperature, Tc -- C IT06598 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. PS No.7685-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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