AONP36336 general description product summary q1 q2 v ds 30v 30v i d (at v gs =10v) 21a 18a r ds(on) (at v gs =10v) < 4.7m < 5.8m r ds(on) (at v gs =4.5v) < 5.7m < 7.3m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.01mh c e as t j , t stg symbol typ q1 typ q2 max q1 max q2 t 10s 30 33 36 40 steady-state 52 55 63 66 steady-state r q jc 3 3.3 3.8 4.2 12 33 mj 88 18 14.5 17 60 45 10 a a 18 t a =25c p d pulsed drain current c 21 t a =70c power dissipation b t c =100c 13 110 parameter t a =70c c units junction and storage temperature range -55 to 150 p dsm w t a =25c power dissipation a 2 3.4 2.2 3.1 maximum junction-to-case c/w c/w maximum junction-to-ambient a d w i dsm maximum junction-to-ambient a c/w 30 t c =25c avalanche current c continuous drain current continuous drain current g r q ja thermal characteristics v a absolute maximum ratings t a =25c unless otherwise noted v units i d 12 50 t c =100c 30 gate-source voltage t c =25c 42 12 50 35.5 minimum order quantity 30v dual asymmetric n-channel mosfet ? bottom source technology ? very low r ds(on) at vgs 4.5v ? low gate charge ? high current capability ? rohs and halogen-free compliant max q1 max q2 30 parameter drain-source voltage AONP36336 dfn3.3x3.3b tape & reel 3000 ? buck-boost converters in computing ? point of load converter ? see note i orderable part number package type form pin 1 dfn3.3x3.3b top view bottom view q1 q2 pin 1 rev.1.0: june 2018 www.aosmd.com page 1 of 10 downloaded from: http:///
AONP36336 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.1 1.5 1.9 v 3.9 4.7 t j =125c 5.4 6.5 4.5 5.7 m g fs 100 s v sd 0.7 1 v i s 40 a c iss 1330 pf c oss 280 pf c rss 35 pf r g 0.4 0.8 1.2 q g (10v) 19 29 nc q g (4.5v) 8 14 nc q gs 3 nc q gd 2 nc t d(on) 5.5 ns t r 2.5 ns t d(off) 21.5 ns t f 2 ns t rr 11 ns q rr 19 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. m v gs =10v, v ds =15v, i d =20a total gate charge q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =12v maximum body-diode continuous current input capacitance gate-body leakage current body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =20a i f =20a, di/dt=500a/ m s turn-on rise time reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a a. the value of r q ja is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upp er dissipation limit for cases where additional heatsinking is used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mo unted to a large heatsin k, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. i. for application requiring slow >1ms turn-on/turn-off, please c onsult aos fae for proper product selection. rev.1.0: june 2018 www.aosmd.com page 2 of 10 downloaded from: http:///
AONP36336 typical electrical and thermal characteristics 0 20 40 60 80 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e- 05 1.0e- 04 1.0e- 03 1.0e- 02 1.0e- 01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 2 4 6 8 10 12 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =2v 2.5v 4.5v 10v 3v rev.1.0: june 2018 www.aosmd.com page 3 of 10 downloaded from: http:///
AONP36336 typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms 0 30 60 90 120 150 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction- to - case (note f) 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c r q jc =3.8 c/w rev.1.0: june 2018 www.aosmd.com page 4 of 10 downloaded from: http:///
AONP36336 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impedance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e - 05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction- to -ambient (note h) t a =25 c r q ja =63 c/w rev.1.0: june 2018 www.aosmd.com page 5 of 10 downloaded from: http:///
AONP36336 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.1 1.5 1.9 v 4.8 5.8 t j =125c 7 8.5 5.8 7.3 m g fs 100 s v sd 0.7 1 v i s 30 a c iss 940 pf c oss 210 pf c rss 30 pf r g 0.9 1.8 2.7 q g (10v) 14 23 nc q g (4.5v) 6 12 nc q gs 2.2 nc q gd 1.6 nc t d(on) 3.5 ns t r 15 ns t d(off) 21.5 ns t f 2.5 ns t rr 10 ns q rr 14 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge i f =18a, di/dt=500a/ m s turn-on delaytime v gs =10v, v ds =15v, r l =0.83 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =18a, di/dt=500a/ m s gate resistance f=1mhz switching parameters total gate charge v gs =10v, v ds =15v, i d =18a total gate charge gate source charge gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance diode forward voltage i s =1a, v gs =0v gate-body leakage current v ds =0v, v gs =12v v ds =v gs, i d =250 m a v gs =4.5v, i d =18a forward transconductance v ds =5v, i d =18a r ds(on) static drain-source on-resistance v gs =10v, i d =18a static parameters drain-source breakdown voltage i d =250a, v gs =0v i dss zero gate voltage drain current a m q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions a. the value of r q ja is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upp er dissipation limit for cases where additional heatsinking is used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mo unted to a large heatsin k, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. i. for application requiring slow >1ms turn-on/turn-off, please c onsult aos fae for proper product selection. rev.1.0: june 2018 www.aosmd.com page 6 of 10 downloaded from: http:///
AONP36336 typical electrical and thermal characteristics 0 20 40 60 80 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 3 4 5 6 7 8 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e- 05 1.0e- 04 1.0e- 03 1.0e- 02 1.0e- 01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =18a v gs =10v i d =18a 2 4 6 8 10 12 14 16 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =18a 25 c 125 c 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =2v 2.5v 4.5v 10v 3v rev.1.0: june 2018 www.aosmd.com page 7 of 10 downloaded from: http:///
AONP36336 typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =15v i d =18a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c r q jc =4.2 c/w t on t p dm 0 20 40 60 80 100 120 140 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction- to - case (note f) rev.1.0: june 2018 www.aosmd.com page 8 of 10 downloaded from: http:///
AONP36336 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impedance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e - 05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction- to -ambient (note h) t a =25 c r q ja =66 c/w t on t p dm rev.1.0: june 2018 www.aosmd.com page 9 of 10 downloaded from: http:///
AONP36336 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & waveforms figure c: unclamped inductive switching (uis) test circuit & waveforms figure d: diode recovery test circuit & waveforms rev.1.0: june 2018 www.aosmd.com page 10 of 10 downloaded from: http:///
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