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| savantic semiconductor product specification silicon pnp power transistors 2SB891F d escription with to-126 package complement to type 2sd1189f low collector saturation voltage applications for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -40 v v ceo collector-emitter voltage open base -32 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -2 a i cm collector current-peak -3 a t a =25 1.2 p c collector power dissipation t c =25 5 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB891F characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;i b =0 -32 v v (br)cbo collector-base breakdown voltage i c =-50a ;i e =0 -40 v v (br)ebo emitter-base breakdown voltage i e =-50a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2.0a; i b =-0.2a -0.5 -0.8 v i cbo collector cut-off current v cb =-20v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 a h fe dc current gain i c =-0.5a ; v ce =-3v 82 390 f t transition frequency i c =-0.5a ; v ce =-5v;f=30mhz 100 mhz c ob collector output capacitance i e =0; f=1mhz ; v cb =-10v 50 pf h fe-2 classifications p q r 82-180 120-270 180-390 downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors 2SB891F package outline fig.2 outline dimensions downloaded from: http:/// |
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