ghz technology inc. reserves the right to make changes without further notice. ghz rec ommends that before the product(s) described herein are written into specifications, or u sed in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 umil 80 80 watts, 28 volts, class ab defcom 200 - 500 mhz general description the UMIL80 is a double input matched common emitter broadband transistor specifically intended for use in the 200-500 mhz frequency band. it may be operated in class ab or c. gold metallization and silicon diffused resistors ensure ruggedness and high reliability. case outline 55hv, style 2 absolute maximum ratings maximum power dissipation @ 25 o c 220 watts maximum voltage and current bvces collector to emiter voltage 65 volts bvebo emitter to base voltage 4.0 volts ic collector current 12 a maximum temperatures storage temperature - 65 to +150 o c operating junction temperature +200 o c electrical characteristics @ 25 o c symbol characteristics test conditions min typ max units pout pin pg h c vswr power output power input power gain efficiency load mismatch tolerance f = 400 mhz vcc = 28 volts 80 9.0 55 9.5 10 5:1 watts watts db % bvebo bvces bvceo bvcbo cob h fe q jc emitter to base breakdown collector to emitter breakdown collector to emitter breakdown collector to base breakdown output capacitance dc - current gain thermal resistance ie = 5 ma ic = 20 ma ie = 20 ma ic = 20 ma vcb=28 v, f= 1 mhz vce = 5 v, ic = 1 a 4.0 6031 60 10 80 0.8 volts volts volts volts pf o c/w issue october 1998 : correct case from hu to hv downloaded from: http:///
UMIL80 august 1996 downloaded from: http:///
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