ESD5306D will semiconductor ltd. 1 revision 1. 1 , 201 8 / 0 7 / 0 6 ESD5306D 6 - line s , un i - d irectional, ultra - low capacitance trans ient voltage suppressors descriptions the ESD5306D is a n ultra - low capacitance tvs (tran sient voltage suppressor) array designed to protect high speed data interfaces. it has been specificall y designed to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ) . the ESD5306D incorporates six lines of ultra - low ca pacitance tvs diode . the ESD5306D may be used to provide esd protection up to 20 k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 5 a ( 8/20 s ) according to iec61000 - 4 - 5. the ESD5306D is available in dfn4120 - 10l package. standard products are pb - free and hal ogen - free. features ? stand - off voltage: 5 v max . ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 2 0 k v ( contact discharge ) iec61000 - 4 - 5 (surge): 4 a (8/20 s) ? ultra - low capacitance: c j = 0.4 pf typ. ? ultra - low leakage current: i r <1na typ . ? l ow clamping voltage : v cl = 1 9 v @ i pp = 16a (tlp) ? solid - state silico n technology applications ? usb 2.0 and usb 3.0 ? hdmi 1.3 and hdmi 1.4 ? sata and esata ? dvi ? ieee 1394 ? pci express ? notebooks h ttp // : www. sh - willsemi.com dfn4120 - 10l ( top v iew) circuit d iagram 5306 d = device code yymm = data code marking (top view) order i nformation device package shipping ESD5306D - 10 /tr dfn4120 - 10l 6 000/tape&reel 1 2 3 4 5 6 7 8 9 10 i / o 1 nc i / o 2 i / o 3 nc i / o 6 gnd i / o 5 i / o 4 nc 9 4 5 6 7 10 1 5 3 0 6 d y y m m
ESD5306D will semiconductor ltd. 2 revision 1. 1 , 201 8 / 0 7 / 0 6 absolute maximum ratings electrical characteristics (t a =25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol rating unit peak pulse power (t p = 8/20s) p pk 5 6 w peak pulse current (t p = 8/20s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 kv esd according to iec61000 - 4 - 2 contact discharge 2 0 j unction temperature t j 125 o c operation temperature t op - 40 to 85 o c storage temperature t stg - 55 to 150 o c lead temperature t l 260 o c parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v reverse leakage current i r v rwm = 5v <1 100 n a reverse breakd own voltage v br i t = 1ma 7.0 8.0 9.0 v forward voltage v f i t = 1 0ma 0.6 0.9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 19.0 v dynamic resistance 1) r dyn 0.65 clamping voltage 2 ) v cl i pp = 1a, t p = 8/20s 1 1 v i pp = 4 a , t p = 8/20s 14 v j unction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0. 25 0. 40 pf
ESD5306D will semiconductor ltd. 3 revision 1. 1 , 201 8 / 0 7 / 0 6 typical characteristics (t a =25 o c, unless otherwise noted ) 8/20 s waveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs . ambient temperature t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 1 2 3 4 5 8 10 12 14 16 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) 0 1 2 3 4 5 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between any i/o pins i/o to gnd f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 1 10 100 1000 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 5 10 15 20 25 30 0 100 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 s time to half-value: t 2 = 20 s peak pulse current (%) time ( s) t
ESD5306D will semiconductor ltd. 4 revision 1. 1 , 201 8 / 0 7 / 0 6 esd clamping (+8kv contact discharge per iec61000 - 4 - 2) esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2) tlp measuremen t 0 2 4 6 8 10 12 14 16 18 20 22 -2 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESD5306D will semiconductor ltd. 5 revision 1.1, 2018/07/06 package outline dimensions dfn4120-10l ? c e d3 a a1 h d2 e2 b n5 n1 d1 top view bottom view side view d e d1 nd n6 n10 h symbol dimensions in millimeters min. typ. max. a 0.45 - 0.60 a1 0.00 - 0.05 b 0.15 0.20 0.25 c 0.10 0.15 0.20 d 4.00 4.10 4.20 d1 0.20 0.25 0.30 d2 1.25 1.40 1.50 d3 0.25 0.30 0.35 e 0.80bsc nd 3.20bsc e 1.90 2.00 2.10 e2 0.65 0.80 0.90 k 0.20 - - l 0.20 0.30 0.40 h 0.15 0.20 0.25
ESD5306D will semiconductor ltd. 6 revision 1.1, 2018/07/06 tape and reel information reel dimensions tape dimensions w p1 quadrant assignments for pin1 orientation in tape q1 q2 q4 q3 q1 q2 q4 q3 rd reel dimension w overall width of the carrier tape 1 p1 pitch between successive cavity centers pin1 pin1 quadrant user direction of feed rd 7inch 13inch 2mm 4mm 8mm q1 q2 q3 q4 8mm 12mm 16mm
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