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| savantic semiconductor product specification silicon npn power transistors BU931R bu932r d escription with to-3 package darlington applications automotive ignition applications inverters circuits for motor controls pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit BU931R 400 v cbo collector-base voltage bu932r open emitter 450 v BU931R 450 v ceo collector-emitter voltage bu932r open base 500 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current-peak 30 a i b base current 1 a i bm base current-peak 5 a p t total power dissipation t c 1 25 175 w t j junction temperature 200 t stg storage temperature -40~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors BU931R bu932r characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BU931R 400 v ceo collector-emitter sustaining voltage bu932r i c =100ma ; i b =0 450 v v cesat-1 collector-emitter saturation voltage only for BU931R i c =7a; i b =70ma 1.6 v BU931R i c =8a; i b =100ma v cesat-2 collector-emitter saturation voltage bu932r i c =8a; i b =150ma 1.8 v v cesat-3 collector-emitter saturation voltage only for BU931R i c =10a; i b =250ma 1.8 v BU931R i c =8a; i b =100ma v besat-1 base-emitter saturation voltage bu932r i c =8a; i b =150ma 2.2 v v besat-2 base-emitter saturation voltage only for BU931R i c =10a; i b =250ma 2.5 v BU931R v ce =400v ;i b =0 i ceo collector cut-off current bu932r v ce =450v ;i b =0 1.0 ma BU931R v ce =400v ;v be =0 t c =125 1.0 5.0 i ces collector cut-off current bu932r v ce =450v ;v be =0 t c =125 1.0 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 50 ma h fe dc current gain i c =5a ; v ce =10v 300 v f diode forward voltage i f =10a 2.8 v switching times t s storage time 15 s t f fall time i c =7a ;i b =70ma ;v be =0;r be =47 @ v cc =12v,v clamp =300v;l=7mh 0.5 s downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors BU931R bu932r package outline fig.2 outline dimensions downloaded from: http:/// |
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