isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1 www.fairchildsemi.com 1 isl9v5045s3st_f085 ecospark n-channel ignition igbt 500mj , 450v features ? scis energy = 500mj at t j = 25 o c ? logic level gate drive applications ? automotive ignition coil driver circuits ? coil - on plug applications general description the isl9v5045s3st_f085 is next generation ignition igbt that offer outstanding scis capability in the industry standard d2-pak (to-26 3) plastic package. this device is intended for use in automotive ignition circuits, specifically as a co il drivers. internal diodes provide voltage clamping without the need for external components. devices can be custom made to specific clamp voltages. contact your nearest fairchild sales office for more information. package gate collector emitter r 2 r 1 symbol jedec to-263ab gate emitter collector (flange) d 2 -pak ? qualified to aec q101 ? rohs compliant ? ecospark ? february 2012
www.fairchildsemi.com 2 device maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 1 ma) 480 v bv ecs emitter to collector voltage - reverse battery condition (i c = 10 ma) 24 v e scis25 at starting t j = 25c, i scis = 39.2a, l = 650 ? ?, , ?, ? ? isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1
www.fairchildsemi.com 3 dynamic characteristics q g(on) gate charge i c = 10a, v ce = 12v, v ge = 5v, see fig. 14 - 32 - nc v ge(th) gate to emitter threshold voltage i c = 1.0ma, v ce = v ge, see fig. 10 t c = 25c 1.3 - 2.2 v t c = 150c 0.75 - 1.8 v v gep gate to emitter plateau voltage i c = 10a, v ce = 12v - 3.0 - v switching characteristics t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 ?, ? , ? ?, ? ? isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1
www.fairchildsemi.com 4 figure 3. 1.10 1.05 1.00 0.95 0.90 25 -25 175 125 75 -50 0 50 100 150 t j , junction temperature (c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 5.0v v ge = 8.0v i ce = 6a v ge = 4.5v 0.85 collector to em itter on-state voltage vs junction temperature figure 4. 25 -25 175 125 75 -50 0 50 100 150 1.25 1.20 1.15 1.10 1.05 v ce , collector to emitter voltage (v) 1.00 t j , junction temperature (c) i ce = 10a v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v collector to emitter on-state voltage vs junction temperature figure 5. i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 40 02.0 1.0 3.0 4.0 50 30 10 0 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = - 40c collector current vs co llector to emitter on-state voltage figure 6. i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 40 0 50 30 02.0 1.0 3.0 4.0 20 10 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 25c collector current vs co llector to emitter on-state voltage figure 7. i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 50 40 02.0 1.0 3.0 4.0 30 t j = 175c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v 20 10 collector to em itter on-state voltage vs collector current figure 8. i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 2.0 1.0 3.0 4.0 50 40 30 0 2.5 1.5 3.5 4.5 pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 25c t j = 175c t j = -40c 20 10 transfer characteristics typical characteristics (continued) isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1
www.fairchildsemi.com 5 figure 9. 0 5 10 15 20 25 30 35 40 45 50 55 25 50 75 100 125 150 175 i ce , dc collector current (a) t c , case temperature (c) v ge = 4.0v dc collector current vs case temperature figure 10. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 v th , threshold voltage (v) t j , junction temperature (c) v ce = v ge i ce = 1ma threshold voltage vs junction temperature figure 11. leakage current (a) t j , junction temperature (c) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 v ecs = 24v v ces = 300v v ces = 250v leakage current vs junction temperature figure 12. 25 175 125 75 50 100 150 t j , junction temperature (c) switching time (s) 20 16 12 6 2 i ce = 6.5a, v ge = 5v, r g = 1k ? ?, isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1
www.fairchildsemi.com 6 figure 15. breakdown voltage 430 435 440 445 450 455 460 465 470 475 10 100 1000 5000 bv cer , breakdown voltage (v) r g , series gate resistance ( ? ? isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1
www.fairchildsemi.com 7 figure 19. t p v gs 0.01 ? isl9v5045s3st_f085 n-channel ignition igbt isl9v5045s3st_f085 rev. a1
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