iziieu <^>.mi-(-on.a\jickoi lptoaucti., una. c x j 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . 2N6786 telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 n-channe l enhancement-mod e powe r mo s field-effec t transisto r description th e 2n678 6 i s a n n-channe l enhancement-mod e silicon-gat e powe r mo s field-effec t transisto r designe d fo r application s suc h a s switchin g regulators , switchin g converters , moto r drivers , rela y drivers , an d driver s fo r high-powe r bipola r switchin g transistor s requirin g hig h spee d an d lo w gate-driv e power . thi s typ e ca n b e operate d directl y from integrate d circuits . th e 2n678 6 i s supplie d i n th e jede c to-205a f (lo w profil e to-39 ) meta l package . features ? 1.25a , 400 v ? ?t>s(on ) = 3 - 6 n ? so a i s power-dissipatio n limite d ? nanosecon d switchin g speed s ? linea r transfe r characteristic s ? hig h inpu t impedanc e ? majorit y carrie r devic e absolut e maximu m rating s o c - +25c ) unles s otherwis e specifie d drain-sourc e voltag e v d s drain-gat e voltag e (r g s = 20kn ) vdg r continuou s drai n curren t t c = +25 c ' d t c = +100 c ' d pulse d drai n curren t 'd m gate-sourc e voltag e v g s continuou s sourc e curren t ' s puls e sourc e curren t 's m maximu m powe r dissipatio n t c = +25 c (se e figur e 14 ) p d abov e t c = +25c , derat e linearl y (se e figur e 14 ) inductiv e current , clampe d 'l m (l=100p.h ) operatin g an d storag e junctio n temperatur e rang e tj , tst g maximu m lea d temperatur e fo r solderin g t l (0.063 " (1.6mm ) fro m cas e fo r 10s ) 2n678 6 400 * 400 * 1.25 * 0.8 * 5.5 * 20 * 1.25 * 5.5 * 15 * 0.12 * 5. 5 -5 5 t o +150 * 300 * unit s v v aa a v aa w w/q c a c o c n. i .semi-conductor s reserve s th e righ t t o chang e les t conditions , paramete r limit * :m d packug e jimension s withou t notic e informatio n turrmht d b y n j semi- t unductor s h believe d t o h e bot h accurat e an d reliabl e .i t th e tim e o f goin g t o press . howeve r s i semi-< _ oiuluclor s .b.miinc s n o responsibilit y to r m y error s >> r omission * discovere d i n it s h.-. c n j semi-cnmlin.ti . n;fihut s r n vcrit \h 1 1 iliilivjhiv n i w i nrrt'n t h electrica l characteristic s a t t c = 25' c (unles s otherwis e sptclfltd ) characteristi c drain-sourc e breakdow n voltag e bvos s gat e threshol d voltag e v q8 (th ) gate-sourc e leakag e forwar d los s gate-sourc e leakag e revers e loa a zero-gat e voltag e drai n curren t los s on-stat e voltage * vos(on ) stati c drain-sourc e on-stat e resistance * ros(on ) diod e forwar d voltage * v 8 o forwar d transconductance * gt . inpu t capacitanc e ci m outpu t capacitanc e co m revers e transfe r capacitanc e c m turn-o n dela y tim e td(on ) ris e tim e t , turn-o f dela y tim e woff ) fal l tim e t f saf e operatin g are a so a tes t condition s vq s = 0 v , l o = 0.2 5 m a vq s ~ voa , l o = 0. 5 m a vo s - 2 0 v , vd s = 0 v vo s = -2 0 v . vo s - 0 v vo s = 40 0 v , vo s = 0 v vo s = 32 0 v , va s = 0 v , t c = 125 c vo s = 10v , l o = 1.25a va s ? 1 0 v , l o = 0. 8 a , t a = 25 c vq s = 1 0 v , i d = 0. 8 a , t a = 125 c t c ? 25c , i s = 1.2 5 a , va s = 0 v vo s = 5 v , l o = 0. 8 a vo s = 0 v , vd s * 2 5 v , f = 1 mh z se e fig . 1 0 vo o = 17 0 v , l o = 0. 8 a , z o - 5 0 n se e fig . 15 . (mosfe t switchin g time s ar e essentiall y independen t o f operatin g temperature. ) vo s * 20 0 v . i d = 7 5 ma , se e fig . 16 . vo s - 1 2 v , i d = 1.2 5 a , se e fig . 16 . limit s mln . 400 * 2.0 * 0.6 ' 0.7 * 60 * 15 * 2 * 1 5 1 5 typ . 3. 3 1. 2 13 5 3 5 8 max . 4.0 * 100 * 100 * 250 * 1000 * 4.5 * 3.6 * 7.92 * 1.4 * 2.1 * 200 * 50 * 15 * 15 * 20 * 35 * 30 * unit s v n a m v n v s(u ) p f n s w therma l resistanc e junction-to-cas e rgi c junction-to-ambien t r0, a fre e ai r operatio n _ 8.33 * 17 5 c/ w source-drai n diod e switchin g characteristic s (typical ) revers e recover y tim e t n revers e recovere d charg e q n n forwar d turn-o n tim e to n tj=150c , u=1.2 5 a , dif/dt=10 0 a/fia tj=150c , lf=1.2 5 a , dif/dt=10 0 a/fis 38 0 2. 7 n s h c intrinsi c turn-o n tim e i s negligible . turn-o n spee d i s substantiall y controlle d b y u + lo . 'jede c registere d value . ?puls e test : puls e widt h 30 0 fa, dut y cycl e < 2% . downloaded from: http:///
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