i, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2n541 5 2n541 6 silico n pn p transistor s descriptio n th e 2n5415 , 2n541 6 ar e hig h voltag e silico n epitaxia l plana r pn p transistor s i n jede c to-3 9 meta l cas e designe d fo r us e i n consume r an d industria l line-operate d applications . thes e device s ar e particularl y suite d a s driver s i n high-voltag e lo w curren t inverters , switchin g an d serie s regulators . to-3 9 interna l schemati c diagra m absolut e maximu m rating s symbo l vcb o vce o veb o i c i b plo t plo t t$t g t j paramete r collector-bas e voltag e (l e = 0 ) collector-emitte r voltag e (l e = 0 ) emitter-bas e voltag e (i c = 0 ) collecto r curren t bas e curren t tota l dissipatio n a t t c < 2 5 c tota l dissipatio n a t t am b < 5 0 c storag e temperatur e max . operatin g junctio n temperatur e valu e 2n541 5 2n541 6 -20 0 j -35 0 -20 0 ' -30 0 - 4 | - 6 -1 -0. 5 1 0 1 -6 5 t o 20 0 20 0 uni t vv v a a ww c c n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
therma l dat a therma l resistanc e junction-cas e therma l resistanc e junction-ambien t ma x ma x 17. 5 17 5 electrica l characteristic s (teas e = 2 5 c unles s otherwis e specified ) c/ w c/ w symbo l icb o ice o ieb o vcer * vceo(sus) * vce(sat) * vbe * hfe * hf e f l ccb o paramete r collecto r cut-of f curren t (i e = 0 ) collecto r cut-of f curren t (i b = 0 ) emitte r cut-of f curren t (l c = 0 ) collector-emitte r sustainin g voltag e collector-emitte r sustainin g voltag e collector-emitte r saturatio n voltag e base-emitte r voltag e d c curren t gai n smal l signa l curren t gai n transitio n frequenc y collecto r bas e capacitanc e tes t condition s for2n541 5 vc b = -17 5 v for2n541 6 vc b = -28 0 v vc e = -15 0 v for2n541 5 v e b = - 4 v for2n541 6 ve b = - 6 v i c = -5 0 m a r b e = so u fo r 2n541 6 i c = -1 0 m a for2n541 5 fo r 2n541 6 i c = -5 0 m a i b = - 5 m a i c = -5 0 m a vc e = -10 v i c = -5 0 m a vc e = -1 0 v for2n541 5 fo r 2n541 6 i c = - 5 m a vc e = -10 v f=1kh z l c = -10m a vc e = -10 v f = 5mh z i e = 0 vc b = -1 0 v f = 1mh z min . -35 0 -20 0 -30 0 3 0 3 0 2 5 1 5 typ - max . -5 0 -5 0 -5 0 -2 0 -2 0 uni t u. a m a u a u a u. a v vv -2. 5 -1. 5 15 0 12 0 2 5 v v mh z p f ??? pulsed : puls e duratio n = 30 0 us , dut y cycl e 1 . 5 % dim . a b 0 e f g h i l m m min . 12. 7 5.0 8 typ . max . 0.4 9 6. 6 8. 5 9. 4 1. 2 0. 9 inc h min . 0.50 0 0.20 0 typ . max . 0.01 9 0.26 0 0.33 4 0.37 0 0.04 7 0.03 5 45 (typ. ) downloaded from: http:///
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